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《ACTA ELECTRONICA SINICA》 2000-02
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Study on Nitridation-Induced Residual Stress near Si/SiO_2 Interface in n MOSFETs

XU Jing Ping 1,LI Pei tao 2,LI Bin 2(1 Department of Solid State Electronics,Huazhong University of Science and Technology,Wuhan 430074,China; 2 Department of Electrical and Electronic Engineering,The University of Hong Kong,Pokfulam Road,Hong Kon  
Residual mechanical stresses near the Si/SiO 2 interface in n MOSFETs induced by different nitridation processings are investigated by means of Ar + backsurface bombardment.The results show that the NH 3 nitridation and the N 2O growth result in larger residual stress,with the former from higher interfacial nitrogen incorporation and the later from its initial accelerated growth phase.However,the residual stress is negligible for N 2O nitrided oxide,indicating that fresh N 2O nitrided oxide itself has excellent interfacial and bulk properties.
【Fund】: 香港大学RGC和CRCG基金
【CateGory Index】: TN304.02
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【References】
Chinese Journal Full-text Database 1 Hits
1 Ling Xiaoming,Fan Duowang(Key Laboratory of Optoelectronic Technology and Intelligent Control(Lanzhou Jiaotong University),Ministry of Education,Lanzhou 730070,China);PLC Control System Built in Large Plasma Bombardment Cleaning Device[J];Journal of Lanzhou Jiaotong University;2006-01
【Co-references】
Chinese Journal Full-text Database 1 Hits
1 LIAO MEI\|YONG ZHANG JIAN\|HUI QIN FU\|GUANG LIU ZHI\|KAI YANG SHAO\|YAN WANG ZHAN\|GUO (Laboratory of Semiconductor Materials Science,Institute of Semiconductors, Chinese Academy of Sciences, Beijing\ 100083,China) LEE SHUIT\|TANG (Department of;CARBON FILM DEPOSITED BY MASS-SELECTED LOW ENERGY ION BEAM TECHNIQUE AND ION BOMBARDMENT EFFECT[J];ACTA PHYSICA SINICA;2000-11
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