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Study on Nitridation-Induced Residual Stress near Si/SiO_2 Interface in n MOSFETs

XU Jing Ping 1,LI Pei tao 2,LI Bin 2(1 Department of Solid State Electronics,Huazhong University of Science and Technology,Wuhan 430074,China; 2 Department of Electrical and Electronic Engineering,The University of Hong Kong,Pokfulam Road,Hong Kon  
Residual mechanical stresses near the Si/SiO 2 interface in n MOSFETs induced by different nitridation processings are investigated by means of Ar + backsurface bombardment.The results show that the NH 3 nitridation and the N 2O growth result in larger residual stress,with the former from higher interfacial nitrogen incorporation and the later from its initial accelerated growth phase.However,the residual stress is negligible for N 2O nitrided oxide,indicating that fresh N 2O nitrided oxide itself has excellent interfacial and bulk properties.
【Fund】: 香港大学RGC和CRCG基金
【CateGory Index】: TN304.02
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