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《ACTA ELECTRONICA SINICA》 2000-02
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Re-radiation Characteristics of Metal oxide metal Junction Excited by Incident Microwave and Its Difference From PN Junction

DING Hong qing,LI Bin hong,ZHOU Xue song(1 Dept.of Electronics Engineering,Shanghai Jiaotong Univ.,Shanghai 200030,China; 2 Shanghai Research Institute of Microwave Tech.,Shanghai 200063,China)  
The general analysis method of the re radiation characteristics of the metal junction excited by microwave is given.This method can be used in all kinds of metal junctions.The I V characteristic of metal barrier metal junction is analyzed by electron tunneling,and is expressed by the power series.The procedure of numerical analysis and the final result of the typical junction are given.From the numeric results,it can be found that the re radiation wave amplitude of the 3 rd harmonic is greater than that of the 2 nd harmonic when the metal junction is excited by incident microwave at lower power.This characteristic can be used to distinguish the metal junction from the PN junction whose reradiated amplitude of the 3 rd harmonic is less than that of the 2 nd harmonic under the same condition.This distinction is just the theoretic base of many testing instruments.But when the power of incident wave is increased,the difference between the metal junction and PN junction will disappear.So in application,the power limitation of incident wave should be noted for keeping the reliability of the instruments.
【CateGory Index】: TN302
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