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The Impact of Body Effect on TID of Ultra Deep Sub Micron SOI Devices

XI Shan-xue;LU Wu;ZHENG Qi-wen;CUI Jiang-wei;WEI Ying;YAO Shuai;ZHAO Jing-hao;GUO Qi;University of Chinese Academy of Sciences;Key Laboratory of Functional Material and Devices for Special Environment,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences;Xinjiang Key Laboratory of Electronic Information Material and Device;  
The impact of body effect on the total dose effect of ultra deep sub micron SOI devices is studied.130 nm SOI NMOSFET devices were irradiated in TG bias state,the electrical parameters of devices before and after irradiation were monitored under different body bias.The short channel PD SOI NMOS devices are more sensitive to total dose radiation,and the larger channel width to length ratio of devices will cause more damage.After a certain dose of radiation,the partially depleted devices will turn into fully depleted devices,and the radiation-induced coupling effect can be observed.Significant threshold voltage shifts and large leakage currents can be observed after irradiation of 10μm/0.35μm devices.The transfer characteristic curve at negative body bias is positively shifted compared with it at zero body bias before the device is irradiated.When the body voltage Vb=-1.1 V,then partially depleted devices become full-depletion devices.And continued increase in |Vb| will not result in continued increase in the width of the depletion area,which shows that the negative body bias can no longer adjust the width of the depletion region,so the transfer characteristic curve of the device does not show a positive shift similar to that before irradiation.
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