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Ion Beam Synthesis and Microstructural Studies of Ti-silicides

Jin Xing(Beijing Laboratory of Electron Microscopy,Chinese Academy of Sciences ,Beijing 100080,China)Gong Zexiang Li Xiaona Ma Tengcai Yang Dazhi(National Laboratory of Materials Modification,Dalian University of Technology,Dalian116024,China)Mark Aindow(Department of Materials Science and Engineering,Birmingham University,England)  
Titanium silicide has been formed by ion implantation of Ti into silicon(111)wafer and thermal annealing. Transmission electron microscopy shows that a continous C54-TiSi_2 layer is present on silicon substrate surface after annealing at 800℃ for 30min. The orientation relationship between the C54-TiSi_2 determined as [121]_(TiSi_2)//[-110]_(Si) and (1(?)1)_(TiSi_2)//(1(?)1)_(Si). Meanwhile, a new TiSi_2 phase is reported in this literature.
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