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《Journal of Chinese Electron Microscopy Society》 2002-01
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Studies of carbon doped β-FeSi_2 films by transmission electron microscopy

LI Xiao na 1, 2 ,NIE Dong 1,DONG Chuang 1 (1 State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Department of Materials Engineering, Dalian University of Technology,Dalian,Liaoning 116024, China; 2 Beijing Labor  
This paper investigated the microstructure of β FeSi 2 and carbon doped β Fe(C,Si) 2 films synthesized by MEVVA (metal vapor vacuum arc ion source) ion implantor by transmission electron microscopy (TEM). We demonstrated that the film quality was indeed improved as manifested by smoother β/Si interface, more homogeneous film thickness, finer grains, and higher thermal stability. When the energy and dosage are high enough (60kV and 4×10 17 ions/cm 2), amorphous layer was formed directly, which transformed into homogeneous and smooth β FeSi 2 surface films after crystallization.
【Fund】: 国家自然科学基金资助项目 (No :5 9872 0 0 7)~~
【CateGory Index】: TN304.055
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【References】
Chinese Journal Full-text Database 2 Hits
1 WANG Pengqiao,XIE Quan,LUO Qian(Institute of Advanced Optoelectronic Materials and Technology,College of Science,Guizhou University,Guiyang 550025);Review on Doped β-FeSi_2[J];Materials Review;2011-01
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【Citations】
Chinese Journal Full-text Database 2 Hits
1 Li Hui; Ma hui and Ding Weiqing (Analyzing and Testing Center, Beijing Normal University, Beijing 100875)Qin Fuguang (Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083);Study on Iron Dissilicide (β-FeSi_2) Epitaxial Thin Films on Si(111) Substrate by Mass-Analyzed Low-Energy Ion Beam Epitaxy[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-04
2 Li Xiaona, Jin Xing(Jin Sing), Dong Cuang ( Dept. of Mater. Eng., Dalian Univ. of Technol., China ) Ma Tengcai ( State Key Lab. for Mater. Modif. by Laser, Ion and Electron Beams, Dalian Univ. of Technol., China ) Zhang Ze ( Beijing Lab.;Research on formation of buried FeSi 2 layer by ion beam synthesis and TEM[J];JOURNAL OF DALIAN UNIVERSITY OF TECHNOLOGY;1997-02
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 LI Xiao na 1,2 ,NIE Dong 1,DONG Chuang 1,XU Lei 3 and ZHANG Ze 2(1 State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams, Department of Materials Engineering,Dalian University of Technology,Dalian 116024,China) (2 Bei;Influences of Carbon Doping on β-FeSi_2 Film Synthesized by Ion Implantation[J];Chinese Journal of Semiconductors;2001-12
2 Li Cheng1,T.Suemasu2,and F.Hasegawa2(1 Department of Physics,Xiamen University,Xiamen 361005,China) (2 Institute of Applied Physics,University of Tsukuba,Ibaraki 305-7583,Japan);Measurements of Carrier Confinement at β-FeSi_2-Si Heterojunction by Electroluminescence[J];Chinese Journal of Semiconductors;2005-02
3 By ION BEAM EPITAXY Wu Zhenglong;Yang Xizhen;Qin Fuguang(1)Analytical and Testing Center, Beijing Normal University, 100875, Beijing, China, 2)Institute of Semiconductors,The Chinese Academy of Sciences, 100083, Beijing, China);ELECTRON SPECTROSCOPIC STUDY AND CHARACTERIZATION OF β-FeSi_2/Si GROWN[J];JOURNAL OF BEIJING NORMAL UNIVERSITY(NATURAL SCIENCE);1998-02
4 XIONG Xicheng, XIE Quan, ZHANG Jinmin, XIAO Qingquan(Institute of Advanced Optoelectronic Materials and Technology,College of Science, Guizhou University,Guiyang 550025);Review on the Heterojunction Based on the β-FeSi_2 Thin Film[J];Materials Review;2010-17
5 ZHU Yu-man, ZHANG Wen-zheng, YE Fei (Department of Materials Science and Engineering,Tsinghua University,Beijing 100084,China);Study of Orientation Relationship between β-FeSi_2 Thin Film and Si Substrate[J];Materials Science and Engineering;2003-05
6 CHEN Xiu-juan1,WANG Si-qian2,MA Shu-fen2,LI Jun-ku2(1.State Key Lab.of gansu Advanced Non-ferrous Metal Materials,Lanzhou 730050,China;2.College of Mechano-Electronic Engineering,Lanzhou Univ.of Tech.Lanzhou 730050,China);Fe-Si INTERMETALLICS FABRICATED BY COMBUSTION SYNTHESIS[J];Powder Metallurgy Industry;2009-03
7 NIE Dong\+1, LI Xiao\|na\+\{1,2\}, DONG Chuang\+1(1. State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Department of Materials Engineering, Dalian University of Technology, Dalian 116024 China; 2. Beijing Laboratory of Elec;Study on the Orientation Relationships Between Semiconducting β-FeSi_2 Films and Si Substrate[J];Transactions of Metal Heat Treatment;2002-03
8 Li Xiao Na 1)2) Nie Dong 1) Dong Chuang 1) Ma Teng Cai 1) Jin Xing 1) Zhang Ze 2) 1) (State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Department of Materials Engineering, D;Microstructure of β-FeSi_2 film synthesized by ion implantation[J];Acta Physica Sinica;2002-01
9 Hu Bing Li Xiao-Na Dong Chuang Jiang Xin(State Key Laboratory of Materials Modification by Laser,Ion and Electron Beams,School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China);Nano-β-FeSi_2/a-Si multi-layered structure prepared by magnetron sputtering[J];Acta Physica Sinica;2007-12
10 Li Xiaona 1,2 ,Nie Dong 1,Dong Chuang 1 1.State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,Department of Materials Engineering,Dalian University of Technology,Dalian 116024,China; 2.Beijing Laboratory of Electron;Studies of β-FeSi_2 and β-Fe(C,Si)_2 Films by Transmission Electron Microscopy and X-ray Diffraction[J];;2002-05
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Yao Zhenyu/Institute of Semiconductors.Academia Sinica,Beijing,100083Ren Zhizhang/Institute of Semiconductors.Academia Sinica,Beijing,100083Wang Xiangming/Institute of Semiconductors.Academia Sinica,Beijing,100083Liu Zhikai/Institute of Semiconductors.Academia Sinica,Beijing,100083Huang Dading/Institute of Semiconductors.Academia Sinica,Beijing,100083Qin Fuguang/Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Academia Sinica,Beijing,100083Lin Lanying/Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Academia Sinica,Beijing,100083;Study on Growth of Semiconducting β-FeSi_2 Epitaxial Thin Films by Mass-Analyzed Low Energy Ion Beam Epitaxy[J];Chinese Journal of Semiconductors;1992-08
2 Li Hui; Ma hui and Ding Weiqing (Analyzing and Testing Center, Beijing Normal University, Beijing 100875)Qin Fuguang (Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083);Study on Iron Dissilicide (β-FeSi_2) Epitaxial Thin Films on Si(111) Substrate by Mass-Analyzed Low-Energy Ion Beam Epitaxy[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-04
3 LI Xiao na 1,2 ,NIE Dong 1,DONG Chuang 1,XU Lei 3 and ZHANG Ze 2(1 State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams, Department of Materials Engineering,Dalian University of Technology,Dalian 116024,China) (2 Bei;Influences of Carbon Doping on β-FeSi_2 Film Synthesized by Ion Implantation[J];Chinese Journal of Semiconductors;2001-12
4 Li Yongping 1,Lan Qing 2,Wu Zhenglong 3,Zhou Dayong 2,Kong Yunchuan 2,Niu Zhichuan 2, Tian Qiang 1,Yang Xizhen 3 and Wang Yafei 1(1 Department of Physics,Beijing Normal University,Beijing 100875,China) (2 National Laboratory for Superlattices and Microstructures,Institute of Semiconductors, The Chinese Academy of Sciences,Beijing 100873,China) (3 Analytical and Testing Center,Beijing Normal University,Beijing 100875,China);Tuning GaAs/AlAs Band Discontinuities and Influence of GaAs at Different Growth Temperatures[J];Chinese Journal of Semiconductors;2003-02
5 Li Cheng1,T.Suemasu2,and F.Hasegawa2(1 Department of Physics,Xiamen University,Xiamen 361005,China) (2 Institute of Applied Physics,University of Tsukuba,Ibaraki 305-7583,Japan);Measurements of Carrier Confinement at β-FeSi_2-Si Heterojunction by Electroluminescence[J];Chinese Journal of Semiconductors;2005-02
6 Yan Wanjun,Xie Quan,Zhang Jinmin,Xiao Qingquan,Liang Yan,and Zeng Wuxian(College of Electronic Science & Information Technology,Guizhou University,Guiyang 550025,China);Interband Optical Transitions in Semiconducting Iron Disilicide β-FeSi_2[J];Chinese Journal of Semiconductors;2007-09
7 Zhang Jinmin,Xie Quan,Zeng Wuxian,Liang Yan,Zhang Yong,Yu Ping,and Tian Hua (College of Electronic Science and Information Technology,Guizhou University,Guiyang 550025,China);Effects of Annealing on Atomic Interdiffusion and Microstructures in Fe/Si Systems[J];Chinese Journal of Semiconductors;2007-12
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9 Wang Lianwei; Shen Qinwo; Lin Xian; Lin Chenglu and Zou Shichang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, The Chinese Academy of Sciences, Shanghai 200050) Zhuang Zhicheng (Analytical Centre of Physi;β-FeSi_2/SIMOX──A Novel Structure Optoelectronic Material[J];CHINESE JOURNAL OF SEMICONDUCTORS;1996-04
10 Lei Hongbing, Yang Qinqing, Wang Qiming(National Laboratory of Integreted Optic Electronics, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing\ 100083)Zhou Bizhong, Xiao Fangfang(Department of Physics, Xiamen University, Xiamen\ 361;Photoluminescence Study on Luminescence Centers in Erbium Implanted Silicon[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-05
【Secondary References】
Chinese Journal Full-text Database 7 Hits
1 WANG Pengqiao,XIE Quan,LUO Qian(Institute of Advanced Optoelectronic Materials and Technology,College of Science,Guizhou University,Guiyang 550025);Review on Doped β-FeSi_2[J];Materials Review;2011-01
2 ZHANG Juan,SHEN Hong-lie,LU Lin-feng,TANG Zheng-xia,JIANG Feng,LI Bin-bin,LIU Lian-ci,SHEN Zhou(College of Materials Science & Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China);Research on β-FeSi_2 thin films from Fe/Si multilayers deposited by ion beam sputtering[J];Journal of Functional Materials;2010-05
3 MA Dao-jing,ZHANG Jin-min,WANG Yan,ZHU pei-qiang,CHEN Zhan,XIE Quan(College of Science,Institute of Advanced Optoelectronic Materials and Technology,Guizhou University,Guiyang 550025,China);Research of Preparing Methods of Ecological Semiconductor β-FeSi_2 Films[J];Nanoscience & Technology;2009-05
4 WANG Yan,ZHANG Jin-min,MA Dao-jing,ZHU Pei-qiang,CHEN Zhan,XIE Quan (College of Science,Institute of Advanced Optoelectronic Materials and Technology,Guizhou University,Guiyang 550025,China);Influences of Annealing on the Formation and the Microstructures of Silicides in the System of 200 nm Fe on Si[J];Nanoscience & Technology;2010-01
5 LU Lin-feng,SHEN Hong-lie,ZHANG Juan,JIANG Feng,LI Bin-bin,SHEN Zhou,LIU Lian-ci ( College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China) ( Received 6 December 2009,accepted 12 March 2010);Influence of Sublayer Thickness Ratio of the Fe/Si Multilayer Films on the Structure and Surface Morphology of β-FeSi_2 Thin Film[J];Journal of Synthetic Crystals;2010-04
6 Niu Hua-Lei Li Xiao-Na Hu Bing Dong Chuang Jiang Xin(State Key Laboratory of Materials Modification by Laser,Ion and Electron Beam,School of Material Science and Engineering,Dalian University of Technology,Dalian 116024,China);Room-temperature photoluminescence analysis of nano-β-FeSi_2/a-Si multilayer films[J];Acta Physica Sinica;2009-06
7 Li Sheng-Bin Li Xiao-Na Dong Chuang Jiang Xin (Key Laboratory of Materials Modification by Laser,Ion and Electron Beams of Ministry of Eduction, School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China);Formation rule of β-FeSi_2 phases in (Fe,M)Si_2 ternary alloys[J];Acta Physica Sinica;2010-06
【Secondary Citations】
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1 Yao Zhenyu/Institute of Semiconductors.Academia Sinica,Beijing,100083Ren Zhizhang/Institute of Semiconductors.Academia Sinica,Beijing,100083Wang Xiangming/Institute of Semiconductors.Academia Sinica,Beijing,100083Liu Zhikai/Institute of Semiconductors.Academia Sinica,Beijing,100083Huang Dading/Institute of Semiconductors.Academia Sinica,Beijing,100083Qin Fuguang/Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Academia Sinica,Beijing,100083Lin Lanying/Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Academia Sinica,Beijing,100083;Study on Growth of Semiconducting β-FeSi_2 Epitaxial Thin Films by Mass-Analyzed Low Energy Ion Beam Epitaxy[J];Chinese Journal of Semiconductors;1992-08
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