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《Journal of Fudan University(Natural Science)》 2018-02
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Influence of Oxygen Ion Implantation on Electrical Properties of VO_x Thin Film

YANG Bizan;State Key Laboratory of ASIC and System,Fudan University;  
The VO_x thin films(~55 nm)were deposited onto Si_3N_4/Si substrate by a long-throw DC reactive magnetron sputtering.After VOx film deposition,two species,oxygen and argon, were chosen for ion implantation for some samples.Oxygen is an active species well known for passivating defect states in a wide variety of electronic materials.As a comparison,argon was chosen to investigate the influence of ion bombardment on the film.We use four point probe method,SEM,AFM,Raman,FTIR,XPS and XRD to analysis the films' properties after ion implantation.The results show that the TCR of films will increase to-2.57%/K(or-2.51%/K)after low dose O+(or Ar+)ion implantation,while high dose ion implantation inducing the TCR and resistance of films lowering.The analysis show that low dose O+ion implantation have no clearly influence on the film morphology and valence bond.The results show that the activation energy of carrier jumps increases after low dose O+ion implantation,thus inducing the TCR increasing.
【Fund】: 国家自然科学基金(61376108)
【CateGory Index】: O484
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