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Bias Dependence of Electroreflectance Spectra of Zn_(1-x)Cd_xSe/ZnSe Supperlattices at Room Temperature

YU Guang hui 1, FAN X W 1, GUAN Zheng ping 1, YANG Chun lei, ZHANG Ji ying 1, SHEN De zhen 1, HU De bao 2 (1.Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, China 2.Department of Electronic Engineer  
semiconductor heterostructures have been extensively studied in the past several years due to their potential applications in blue and blue green optoelectronic devices. The use of these structures in light emission diode and laser diode requires the applications of an electric field to provide carriers for recombination based optical processes. But the existence of electric field also influences the optical properties of these structures. In this paper, the investigation of the effect of electric field on the electro modulated reflectance (ER)spectra energy and intensity of ZnCdSe ZnSe superlattices was described. The variation of ER spectra under different bias at room temperature is studied for the first time. In the range of the weak electric field, the intensity of the ER spectra increase with increasing the electric field, but the lineshape is almost not affected. In the range of strong electric field, the lineshape of the ER spectra vary with increasing the electric field, and the transition energy shows a red shift. The forbidden transition emerges under certain field intensity, and its intensity increases quickly with increasing the field intensity, these effects are attributed to the quantum confined stark effect (QCSE). The ER spectra of compound superlattice with different potential barrier heights under different bias voltages indicate that the excitons are more easily affected than the superlattice with lower confining energy. The results are useful for the design of ZnSe/based optoelectronic devices.
【Fund】: 国家攀登计划;; 国家自然科学重大基金!( N o.698962 60 );; 国家自然科学基金!( No. 5 9772 0 3 6 N o.698860 0 3 No.699770 19);;
【CateGory Index】: O482
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