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《CHINESE JOURNAL OF LUMINESCENCE》 2000-01
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Effect of Substrate Temperature on the Epilayer Quality of ZnS Grown on the Si Substrate by LP-MOCVD

ZHAO Xiao wei, ZHANG Ji ying, YANG Bao jun, Fan X W, YANG Yi, SHEN De zhen (Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, China)  
ZnS has been of great interest for optoelectronic development as a potential light emitting material. Most Ⅱ Ⅵ compounds have been grown on GaAs substrates. However silicon is the most important semiconductor for electronic industry because of its availability in large area wafer with excellent quality and low cost, and silicon based devices are so highly developed. In this work, the ZnS epilayers directly grown on (111) Si substrates have been successfully obtained at lower temperature (300~400℃) by low pressure metalorganic chemical vapor deposition (LP MOCVD). The growth of ZnS on Si substrates has been investigated primarily by X ray diffraction. The Si substrates were degreased in organic solutions and cleaned using 1HNO 3∶1H 2SO 4 solution and 3HCl∶1H 2O 2∶1H 2O solution, then etched with HF solution to remove the native oxide layer, then immediately flushed with N 2 gas and loaded into the reactor. No high temperature preheat treatment of the Si substrates was used to obtain ZnS in this work. The two step growth method with changing Ⅱ/Ⅵ flow rate was used to obtain ZnS epilayers on Si substrates. The growth mechanism was discussed. A thin amorphous or an unstable crystal structure was deposited at a lower Ⅱ/Ⅵ flow rate for the first layer. The subsequent step was done at a higher and optimum growth Ⅱ/Ⅵ flow rate. The Zn and S atoms would rearrange themselves through a solid phase epitaxial process in which the relatively lattice matched regions may act as seeds for subsequent single crystal growth. The X ray diffraction spectra of ZnS epilayers show that the epilayer qualityincreases with decreasing the growth temperature. The crystallinity was further investigated in terms of the X ray FWHM (full width at half maximum) of ZnS epilayers. The FWHM decreases with decreasing growth temperature. The lowest FWHM of ZnS epilayer grown at 300℃ on Si by the two step method of changing Ⅱ/Ⅵ flow rate is 540 arc·sec.
【Fund】: 国家自然科学重大基金项目!(批准号 698962 60 );; 国家攀登计划项目;; 国家自然科学基金项目;; 中国科学院激发态物理开放研究实验室
【CateGory Index】: O484.1
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