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《CHINESE JOURNAL OF LUMINESCENCE》 2000-01
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Blue Luminescence in Unintentionally Doped GaN Grown by MOCVD

LI Shu ti, WANG Li, XIN Yong, PENG Xue xin, XIONG Chuan bing, YAO Dong min, JIANG Feng yi (Institute of Materials Science, Nanchang University, Nanchang 330047, China)  
The blue luminescence of unintentionally doped GaN at room temperature was studied. The unintentionally doped GaN films were grown on (0001) oriented Al 2O 3 substrate by MOCVD. TMGa and NH 3 were used for Ga and N sources, respectively. N 2 and H 2 were used as carrier gases. Several analytical techniques were employed to characterize the grown layers. The optical properties of GaN films were measured by photoluminescence (PL), the electrical properties were characterized by the Van der Pauw Hall method at room temperature, and the crystalline quality were analysed by double crystal X ray diffraction (DXRD). The research results indicated that the blue luminescence (about 2 9eV) at room temperature in unintentional doped GaN was obviously related with the compensation ratio. The intensity of blue luminescence was strong in high compensation ratio of GaN, while it was weak in light compensation ratio of GaN. It is considered that the blue luminescence was related with acceptor levels. Further study showed that the peak position of the blue luminescence shifted to lower energy by about 35meV with increasing excitation density, and the peak intensity was superlinear with the excitation density. The blue luminescence in undoped GaN was attributed to the transition from the free electron in conduction band to acceptor levels (eA luminescence).The results indicate that the blue luminescence will be restrained and the band edge emission will increase by using a large flow rate H 2 in the main carrier gas.
【Fund】: 国家“8 63”新材料领域资助( 715 -0 0 1-0 0 12 );; 国家自然科学基金!( 696760 19);; 江西省跨世纪人才项目
【CateGory Index】: O472.3
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【References】
Chinese Journal Full-text Database 5 Hits
1 LANG Jia-hong, GU Biao, XU Yin, QIN Fu-wen, QU Gang (State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology,Dalian 116024, China; School of Electrical Engineering & Information , Anhui University of Technology Maanshan 243002, China );Study of ECR-plasma Cleaning and Nitridation of Sapphire Substrate Using RHEED[J];Semiconductor Technology;2005-01
2 JIANG Feng-yi,YAO Dong-min,MO Chun-lan,WANG Li,LI Peng, XIONG Chuan-bing and PENG Xue-xin[KH2D][WT6BX](Institute of Materials Science,Nanchang University,Nanchang 330047,China)[WT5”HZ];Influence of Deviation from Stoichiometry on Crystallinic Qualities and Optoelectronic Properties of MOCVD GaN[J];Chinese Journal of Semiconductors;2001-06
3 Qin Fuwen 1,2,Gu Biao 1,2,Xu Yin 1,2 and Yang Dazhi 3(1 National Laboratory of Material Modification by Three Beams,Dalian University of Technology,Dalian 116024,China) (2 Department of Electrical Engineering and Applied Electronics,Dalian University of Technology,Dalian 116024,China) (3 Department of Material Science and Engineering,Dalian University of Technology,Dalian 116024,China);Study of ECR-Plasma Cleaning and Nitridation of Sapphire Substrate by RHEED[J];Chinese Journal of Semiconductors;2003-06
4 He Jusheng,Zhang Meng,Xu Biao,and Tang Jiancheng(School of Material Science and Engineering,Nanchang University,Nanchang 330031,China);Analytic Models for Compensation Ratio of Wurtzite n-GaN at Room Temperature[J];Chinese Journal of Semiconductors;2007-07
5 LANG Jia-hong 1,2 ,GU Biao 1,2 , XU Yin 1,2 , QIN Fu-wen 1,2 , QU Gang 1,2 (1. State Key Laboratory of Material Modification by Laser, Ion and E lectron Beams, Dalian University of Technology, Dalian 116024, China; 2. Department of Electrical Engineering and Applied Electronics, Dalian Universi ty of Technology, Dalian 116024, China);Study of ECR-Plasma Cleaning of Sapphire Substrate Using RHEED[J];Infrared Technology;2003-06
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 LI Yu-guo,ZHANG Qiu-xia,WANG Jian-bo,SHI Li-wei(Institute of Semiconductor,College of Physics and Electronics,Shandong Normal University,Jinan 250014,CHN);Synthesis and Growth Mechanism of One-dimensional ZnO Nanorods[J];Semiconductor Optoelectronics;2007-04
2 DANG Xiaozhong;ZHANG Guoyi;TONG Yuzhen;WANG Shumin(Beijing University,Beijing 100871,CHN);Epitaxial growth of GaN on sapphire substrate by LP-MOVPE[J];SEMICONDUCTOR OPTOELECTRONICS;1996-01
3 Lü Hai-tao1, ZHANG Wei-lian1, ZUO Yan1, BU Yun-ying2(1. Hebei University of Technology, Tianjin 300130, China;Tianjin SemiconductorTechnology Institute,Tianjin 300051,China);Study on the dislocation of the sapphire crystal with chemical etching[J];Semiconductor Technology;2004-04
4 LI Bing,GUO Xia,LIU Ying,LI Bing-chen,WANG Dong-feng,SHEN Guang-di (Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China);Study on the Back Lapping and Polishing of Sapphire-Based LED Epitaxial Wafers[J];Semiconductor Technology;2005-09
5 Li Yuzeng(Beijing General Research Institute for Nonferrous Metal,Beijing 100088);Recent Progress of GaNBased Film Materials and Devices[J];SEMICONDUCTOR TECHNOLOGY;1998-03
6 WU Xiao-hua, BAO Xi-mao, LI Ning\|sheng, LIAO Liang-sheng and ZHENG Xiang-qin(Department of Physics and National Laboratory of Solid State Microstructure, Nanjing University, Nanjing\ 210093, China)Received 11 December 1998, revised manuscript receive;Electroluminescence From Silicon Based Porous β-SiC Film and Its Mechanism[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-02
7 YAO Dong\|min, XIN Yong, WANG Li, LI Shu\|ti, XIONG Chuan\|bing, PENG Xue\|xin, LIU Nian\|hua and JIANG Feng\|yi(Institute of Materials Science, Nanchang University, Nanchang\ 330047, China)Received 9 February 1999, revised manuscript received 4 May 199;Rutherford Backscattering and Channeling,Double Crystal X\|ray Diffraction and Photoluminescence of GaN[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-05
8 Qin Fuwen 1,2,Gu Biao 1,2,Xu Yin 1,2 and Yang Dazhi 3(1 National Laboratory of Material Modification by Three Beams,Dalian University of Technology,Dalian 116024,China) (2 Department of Electrical Engineering and Applied Electronics,Dalian University of Technology,Dalian 116024,China) (3 Department of Material Science and Engineering,Dalian University of Technology,Dalian 116024,China);Study of ECR-Plasma Cleaning and Nitridation of Sapphire Substrate by RHEED[J];Chinese Journal of Semiconductors;2003-06
9 Zhang Jincheng,Ma Xiaohua,Hao Yue,Fan Long and Li Peixian(Institute of Microelectronics,Xidian University,Xi'an 710071,China);An Analytic Low Field Electron Mobility Model of Wurtzite GaN[J];Chinese Journal of Semiconductors;2003-10
10 Gu Biao, Xu Yin, Sun Kai 1 and Qin Fuwen(National Laboratory of 3 Beams Material Modification, Dalian University of Technology, Dalian 116024) (1 Beijing Lab. of Electron Microscope, The Chinese Adcademy of Sciences, Beijing 100080);Film and Interface of Heteroepitaxial Cubic GaN on (001) GaAs Substrates[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-04
【Secondary References】
Chinese Journal Full-text Database 7 Hits
1 LANG Jia-hong, GU Biao, XU Yin, QIN Fu-wen, QU Gang (State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology,Dalian 116024, China; School of Electrical Engineering & Information , Anhui University of Technology Maanshan 243002, China );Study of ECR-plasma Cleaning and Nitridation of Sapphire Substrate Using RHEED[J];Semiconductor Technology;2005-01
2 LANG Jia-hong1,QIN Fu-wen2,GU Biao2 (1.School of Electrical Engineering & Information , Anhui University of Technology Maanshan 243002, China; 2.Department of Electrical Engineering and Applied Electronics, Dalian University of Technology, Dalian 116024, China);Study of Surface Lattice Transform of Epitaxial GaN-Based Films by Using RHEED[J];Semiconductor Technology;2006-08
3 LANG Jia-hong 1,2 ,GU Biao 1,2 , XU Yin 1,2 , QIN Fu-wen 1,2 , QU Gang 1,2 (1. State Key Laboratory of Material Modification by Laser, Ion and E lectron Beams, Dalian University of Technology, Dalian 116024, China; 2. Department of Electrical Engineering and Applied Electronics, Dalian Universi ty of Technology, Dalian 116024, China);Study of ECR-Plasma Cleaning of Sapphire Substrate Using RHEED[J];Infrared Technology;2003-06
4 LANG Jia-hong1,QIN Fu-wen2,GU Biao2(1.School of Electrical Engineering & Information,Anhui University of Technology,Ma’anshan Anhui 243002,China;2.State Key Laboratory of Material Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian Liaoning 116024,China);Study on Thin Film Growth Temperature by ECR-PEMOCVD Based on the Double Thermocouples[J];Infrared Technology;2007-02
5 QIAO Jian-liang1,2,CHANG Ben-kang1,GAO You-tang1,2,TIAN Si1,2(1.Institute of Electronic Engineering and Optoelectronic Technogy,Nanjing University of Science &Technology,Nanjing Jiangsu 210094,China;2.Department of electronic & electric Engineering,Nanyang Institute of Technology,Nanyang Henan 473004,China);Preparation of NEA GaN Photocathode and It's Application[J];Infrared Technology;2007-09
6 WANG Yan-yan,QIN Fu-wen,MA Shi-meng,WU Ai-min,WANG Ye-an(State Key Laboratory of Material Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian 116024,China);Nitriding of α-Al_2O_3 substrates in GaN films growth[J];Infrared and Laser Engineering;2007-05
7 WANG Juan,LIU Yu-ling,TAN Bai-mei,LI Wei-wei,ZHOU Jian-wei(Institute of Microelectronic Technique & Material,Hebei University of Technology,Tianjin 300130,P.R.China);Fine Polishing of Sapphire Substrates[J];Microelectronics;2006-01
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