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《CHINESE JOURNAL OF LUMINESCENCE》 2000-01
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Relationship Between Structural Characteristics and Compensation Ratio in Unintentionally Doped GaN Grown by MOCVD

XIN Yong, XIONG Chuan bing, PENG Xue xin, WANG Li, YAO Dong min, LI Shu ti, JIANG Feng yi (Institute of Materials Science, Nanchang University, Nanchang 330047, China)  
The correlation of the crystalline quality with the electrical characteristics of the unintentionally doped GaN films has been studied. The growth of unintentionally doped GaN films was performed by MOCVD method using a home made vertical reactor operating at atmospheric pressure. The growth was carried out on (0001) oriented sapphire substrates using trimethylgallium (TMGa) and blue ammonia (NH 3) as Ga and N sources, respectively. The mixed gases of hydrogen and nitrogen were used as the carrier gases. A thin buffer layer with thickness of about 15nm was grown at 520℃ and recrystallized at 1060℃ for 6 minutes. The GaN films were grown at 1060℃. The crystalline quality was analyzed by the Full width at half maximum (FWHM) of double crystal X ray diffraction (DXRD). The electrical properties were measured by Van der Pauw Hall method at the room temperature. Table 1 shows the FWHM of X ray double crystal diffraction and the electrical parameters for GaN films grown by MOCVD on sapphire (0001). Fig.1 shows the function of the electron drift (solid curves) and Hall (dashed curves) mobility on the compensation ratios of 0.00, 0.15, 0.30, 0.45, 0.60, 0.75 and 0.90 for 300K. Fig.2 shows the double crystal X ray rocking curve for unintentionally doped GaN grown by MOCVD on sapphire (0001). These results indicate that there is no obvious relationship between the mobility and the carrier concentration, and neither between the FWHM and the mobility or the carrier concentration. However, there exist an obvious correlation of the FWHM of double crystal X ray diffraction to the compensation ratio at room temperature for the unintentionally doped GaN/Al 2O 3 films. Fig.3 shows the dependence of FWHM on the compensation ratio in unintentionally doped GaN. The FWHM of heavily compensated GaN is broad while that of lightly compensated GaN is narrow. The FWHM becomes wider from 5.6 to 17 minutes with the increasing of the compensation ratios from 0.46 to 0.79. Some possible mechanisms responsible for those phenomena have been analyzed. As for unintentionally doped GaN films with high compensation ratio, the existence of many acceptors and donors will result in deformation in the crystal lattice, so the FWHMs of these samples will be broad. For the samples with low compensation ratio, the lattice deformation is relatively small, and the FWHM is also relatively narrow.
【Fund】: 国家高技术“863”材料委员会资助;; 国家自然科学重大基金资助项目!(批准号 698962 60 )
【CateGory Index】: O472.3
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【Co-references】
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1 CHEN Ye LI Shiqin YAN Hepin WANG Renhui (Wuhan University,Wuhan 430072,CHN);Ion irradiation effects of BSF silicon solar cell[J];SEMICONDUCTOR OPTOELECTRONICS;1997-01
2 CHEN Xiao-jie, LI Ai-zhen, WANG Jia-kuan, HU Yu-sh eng, WANG Le (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050 ,China);Study on Optimized Fabrication Technology of Al_(0.85)Ga_(0.15)As/Gs S olar Cells[J];SEMICONDUCTOR OPTOELECTRONICS;2000-05
3 SHI Xiaozhong;LI Shiqing;YAN Heping;DING Dihua(Dept.of Physics,Wuhan University,Wuhan 430072);Recent advances in the irradiation effects of GaAs solar cells[J];SEMICONDUCTOR OPTOELECTRONICS;1995-04
4 YANG Yan, XUE Chen-yang, ZHANG Bin-zhen, ZHANG Wen-dong (Key Laboratory of Instrumentation Science & Dynamic Measurement of Ministry Education, North University of China. Taiyuan 030051, China );Study of InGaAs/GaAs Quantum Wells by X-Ray Double Crystal Diffraction[J];Semiconductor Technology;2006-02
5 Xu Hongwei/Surface Phycics Laboratory,Institute of Physics,Academia Sinica,Beijing,100080Wang Dingsheng/Surface Phycics Laboratory,Institute of Physics,Academia Sinica,Beijing,100080;Enhancement of Photoelectron Emission Efficiency of Negative Electron Affinity GaAs Cathode by Embedded GaAs/AlAs Multilayer Reflector[J];Chinese Journal of Semiconductors;1992-11
6 Huang Wanxia, Lin Libin(Department of Physics,Radiation & Technology Laboratory, Sichuan University, Chengdu\ 610064)Zeng Yiping, Pan Liang(Institute of Semiconductor, The Chinese Academy of Sciences, Beijing\ 100083)Received 6 November 1998, revised ma;Effects of Optic Character of GaAs/AlGaAs Multiple Quantum Well With Proton Irradiation[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-11
7 SUN Yi jun,LI Ai zhen and QI Ming (State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Metallurgy, The Chinese Academy of Sciences,Shanghai 200050,China);Preparation of Single Phase Hexagonal GaN on GaAs (100) Substrate by MOCVD[J];Chinese Journal of Semiconductors;2001-03
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9 Zhang Jincheng,Ma Xiaohua,Hao Yue,Fan Long and Li Peixian(Institute of Microelectronics,Xidian University,Xi'an 710071,China);An Analytic Low Field Electron Mobility Model of Wurtzite GaN[J];Chinese Journal of Semiconductors;2003-10
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