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《CHINESE JOURNAL OF LUMINESCENCE》 2000-01
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Study on Photoluminescence from Anodic Alumina Films Formed on Silicon Substrate

WU Jun hui, ZOU Jian ping, ZHU Qing, BAO Xi mao [WT5”BX](National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China)  
Anodic alumina films were prepared by anodization of ~ 400nm thick aluminum films evaporated on silicon substrate using electron beam in 15wt% H2SO4 at 25 0C under a constant DC voltage of 40V. FTIR, PL and PLE measurements were performed on those resulting Si based anodic alumina films based upon which possible origin of the PL was discussed. All three PL peaks were analyzed to be related to oxygen deficient defects emission similar to that in sapphire. Among them two sharp peaks centered at 312 nm, 367 nm were basically attributed to F + and F center emission respectively while the origin for third broad 449 nm peak is still unknown and further detailed work is required.
【Fund】: 国家自然科学基金;; 国家攀登计划资助项目!(批准号 :5 983 2 10 0 )
【CateGory Index】: O484.41
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