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《Chinese Journal of Luminescence》 2001-02
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Influence of In Atoms Incorporation on the Luminescence of GaInNAs/GaAs Single Quantum Well

WANG Zhi lu 1, ZHANG Zhi wei 2, SUN Bao quan 3 (1. Tangshan Normal School, Tangshan 063000, China; 2. Inner Mongolia National University, Tongliao 028043, China; 3 National Laboratory for Superlattices and Microstructures, Institute of Se  
GaInNAs alloy has recently attracted considerable attention for both fundamental physical properties and its possible optoelectronic application in long wavelength optoelectronic devices based on GaAs.In general ,the interband luminescence efficiency would be decreased when N atoms are incorporated to form GaNAs and GaInNAs alloys,partly due to a large miscibility gap and phase separation of GaN and GaAs,or the formation of N clusters.It is well known that the incorporation of both In and N will reduce the energy gap of the alloy.Their band shrinkage effect is additive.Therefore,in order to obtain the high quality alloy material and to improve the interband luminescence efficiency in the 1 3 and 1 55μm wavelength region,the study of optimal condition for incorporating N and In atoms into GaInAs/GaAs quantum wells becomes important.In this paper,both GaInNAs/GaAs and reference GaInAs/GaAs quantum wells investigated here were grown on the same (001) GaAs substrate by plasma assisted molecular beam epitaxy.The optical properties of interband transitions and below the band edge have been investigated by incorporating In atoms into GaNAs/GaAs single quantum well.The experimental results show that with increasing In concentration the interband luminescence is improved and the photoluminescence intensity below the band edge in GaInNAs/GaAs single quantum well decreases significantly.An interpretation is given that N atoms are more preferable to form covalent bond with In than with Ga atoms in GaInNAs alloy due to the compensation of the atomic size difference between In and N atoms on GaAs substrate.Thus the lattice mismatched GaInNAs with more In atoms and less N atoms is perhaps a better choice than the lattice matched GaInNAs for luminescence devices.The photoreflectance spectra of the GaInNAs/GaAs single quantum well support to the assignment of the intrinsic mechanism of the high energy luminescence peak.
【CateGory Index】: O472.3
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