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《Chinese Journal of Luminescence》 2001-03
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Growth of InN on GaAs(001) under High N_2 Flux by MBE

QIN Zhi xin, CHEN Zhi zhong , ZHANG Guo yi(Mesoscopic Physics Laboratory, Department of Physics, Peking University, Beijing 100871, China)  
InN epilayers have been grown on GaAs(001)substrates by MBE at 500℃ under the N 2 pressure of 2 67×10 -2 Pa.During the growth,the In flux was varied from 3×10 14 to 24×10 14 atoms/cm 2 sec.The InN films were characterized by X ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) measurements.It is found that the cubic phase InN was grown at initial stage of growth, but the transition from cubic phase InN to hexagonal phase InN occurred with increase of the thickness of InN epilayer.The X ray reciprocal space mapping (RSM) measurements show that the hexagonal phase InN whose c axes are oriented in the GaAs111B direction is dominantly grown on (001) GaAs.
【Fund】: Project Supported by the National Natural Science Foundation of China( 6 9876 0 0 2 )
【CateGory Index】: TN304.054
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