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《Chinese Journal of Luminescence》 2001-03
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Traps Effect on Temperature Dependence of Luminescent Intensity of Ce~(3+) ∶LiSrAlF_6 UV Laser Crystal

WEI Ya guang 1, SHI Chao shu 1,2 , ZHOU Dong fang 1, TAO De jie 3, TANG Hong gao 1 (1. National Synchrotron Radiation Laboratory, Hefei 230029, China; 2. Department of Physics, University of Science and Technology of China, Hefei 230026  
Ce 3+ ∶LiSrAlF 6 crystal is a solid state laser material potentially capable of efficiently producing tunable ultraviolet (UV) output. Recent results suggest that it may be the most efficient continuously tunable , rare earth doped UV laser material reported to date. There are some defects in Ce 3+ ∶LiSrAlF 6 crystal . These defects will affect the laser and luminescence properties of crystal. In this paper, the temperature dependence of luminescent intensity ( I T) of Ce 3+ ∶LiSrAlF 6 crystal with X ray excitation from 105K to 300K has been studied. The luminescent intensity is enhanced " specially " in the range of 237~300K, which is probably caused by traps. In order to verify our surmise, we investigated the thermoluminescence of Ce 3+ ∶LiSrAlF 6 crystal from 105~300K with X ray excitation at 105K for two minutes. From 237~300K, two peaks locate at 258K and 274K respectively. These two peaks are accord to two kinds of traps, whose depth are 0 51eV (258K) and 0 55eV (274K). Comparing I T curve with TL curve, the enhanced part of I T curve is coincided with temperature range in which TL peaks locate. Because the TL peaks originate from traps, we suggest that the special structure of I T curve is caused by the traps effect. That is, during the period of measuring the I T , at lower temperature, some charge carriers relax to luminescent center and luminesce, while some other charge carriers is captured by traps. The release probability of bonded carriers is described as C ×exp(- E/kT ), where C is a constant, E is the depth of trap and T is temperature. With the temperature rising, the bonded charge carriers will release from the traps at higher temperature, via conduct band then relax to luminescent center and give out light, which make the intensity of luminescence enhanced. The origination of defects of Ce 3+ ∶LiSrAlF 6 crystal is discussed too. It is primary that Ce 3+ occupies the sublattice of Sr 2+ in Ce 3+ ∶LiSrAlF 6 crystal, forming Ce Sr 3+ defect. Generally, fluorine vacancies ( V F) always exist in fluoride. Ce Sr 3+ and V F are negative charge center, which form electron traps. The lithium vacancies ( V Li ) are principal positive charges, which compensate the negative charge Ce Sr 3+ and V F, V Li form hole traps. In conclusion, the "special" structures of I T curve in the range of 237~300K is explained by the traps effect, which is verified by means of TL. The depths of two traps are 0 51eV and 0 55eV respectively . These traps mainly originate from Ce Sr 3+ and some intrinsic defects such as V F and V Li .
【Fund】: 国家自然科学基金资助项目 ( 5 9732 0 40 )
【CateGory Index】: O734
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【Co-references】
Chinese Journal Full-text Database 3 Hits
1 Lei Hongbing, Yang Qinqing, Wang Qiming(National Laboratory of Integreted Optic Electronics, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing\ 100083)Zhou Bizhong, Xiao Fangfang(Department of Physics, Xiamen University, Xiamen\ 361;Photoluminescence Study on Luminescence Centers in Erbium Implanted Silicon[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-05
2 Li Yi;Zhou Yongdong ;Li Jusheng; Jiang Hong; Jin Yixin(Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021);LUMINESCENCE OF RARE EARTH Er ION IMPLANTED POROUS SILICON[J];CHINESE JOURNAL OF LUMINESCENCE;1996-01
3 Lihui HUANG-1,Hai LIN-1,Xiaojun WANG-1 and Xingren LIU- 1 ,2 -1Changchun Institute of Physics,Chinese Academy of Sciences,130021 Cha ngchun -2Laboratory of Excited State Processes,Chinese Academy of Sciences,1300 21 Changchun;Spectra and Crystallographic Sites of Ce~(3+) in Ca_3MgSi_2O_8[J];SPECTROSCOPY AND SPECTRAL ANALYSIS;2000-03
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 Ye Yongquan1 Kuang Tongchun2 Lei Shumei2 Yin Shiheng2 Zeng Xiaoping2 Zhu Hongmei1 Xu Xinrong2(1.School of Mechanical Engineering,South China Universityof Technology,Guangzhou 510640,China)(2.Analytical and Testing Center,South China University of Technology,Guangzhou 510640,China);Technique progress in raman spectroscopy characterization of diamond or diamond film[J];Diamond & Abrasives Engineering;2007-05
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