Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Chinese Journal of Luminescence》 2001-03
Add to Favorite Get Latest Update

Preparation of ZnO Thin Films by Electron Beam Evaporation

ZHANG Bin, LIN Bi xia, FU Zhu xi, SHI Chao shu (Structure Research Laboratory, University of Science and Technology of China; Department of Physics, University of Science and Technology of China, Hefei 230026, China)  
Wide band gap semiconductor materials are of considerable interest for their important use in blue and ultraviolet optical devices such as light emitting diodes and laser diodes. In 1997 the ultraviolet laser emission of ZnO film at room temperature was reported.Then the random laser from nanosize ZnO power was also announced.After that this material has attracted a lot of scientists. And high quality ZnO films were grown by different methods such as MOCVD and MBE. We have obtained high quality ZnO films by reactive DC sputtering on Si (100) and Si (111) and observed its superlinear ultraviolet emissions.In order to compare the properties of ZnO films made by different methods,our team prepared ZnO films on Si (100) by electron beam evaporation.We wanted to gain polycrystalline films by this method.A serial of ZnO films has been obtained successfully by changing the speed of growth.All the samples were annealed in air at 950℃ for 1h. From the X ray diffraction pattern it was found that some films had very strong c axis orientation.But the orientation disappeared as the speed of growth became very high. The surface of film was observed by scanning electron microscope.From the picture one can see the crystallite grain with size around 150nm. At last the PL spectrum (210nm excitation) of the ZnO grain films was measured.The emission spectrum showed strong green band peaked at 525nm.The intensity increased with increasing the speed of growth.Because the high speed growth can create more defects,this result showed the emission of green light might be caused by defects. Recently, research efforts were usually focused on the blue emission and ultraviolet emission.We will try to obtain them by changing the conditions of growth and anneal of ZnO films.It was reported that the excitation spectrum of ultraviolet emission (390nm) peaked at 195nm.It's better to excite ZnO films with Synchrotron Radiation shorter than 200nm.
【Fund】: 自然科学基金资助项目 ( 5 9872 0 37)
【CateGory Index】: O484.1
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 5 Hits
1 WANG Zhuang-bing,CHEN Lin-tao,LI Xiang,LU Ying-chun,LIANG Qi (School of Science,Hefei University of Technology,Hefei 230009,China);Characteristic study of nano ZnO films prepared by electron beam evaporation[J];Journal of Anhui University(Natural Sciences);2008-02
2 RUAN Wen-nong,HUANG Bi-hua,HUANG Ci-chang (Department of Electronic Science and Applied Physics,Fuzhou University,Fuzhou 350002,China);Solar Cell Window Layer of ZnO Thin Films Prepared by Electron Beam Evaporation[J];Journal of Jimei University(Natural Science);2006-02
3 WANG Qing-pu,MA Hong-lei,ZHANG Xing-hua & ZHANG Xi-jian (School of Physics and Microelectronics,Shandong University,Jinan,Shandong,250100,P. R. China);Photoluminescence of ZnO films prepared by sputtering[J];Journal of Shandong University(Natural Science);2004-02
4 MENG Xian-quan, CHEN Wei, LI Wei-fen, ZHANG Guan-ming, MA Fei, WANG Dong (School of Physics and Technology,Wuhan University,Wuhan 430072,Hubei,China);Structures and Electric Properties of ZnO Thin Films Prepared by Electron Beam Evaporation[J];Wuhan University Journal(Natural Science Edition);2004-05
5 CHEN Su-guo1,2,YAO He-bao2,LI En-ling1(1.Xi′an University of Technology,Xi′an 710054,China;2.Department of Physics,Northwest University,Xi′an 710069,China);Enucleating green light emission mechanism of ZnO thin films using deep level tansient state analysis method[J];Journal of Northwest University(Natural Science Edition);2009-06
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 WANG Jin zhong, YANG Xiao tian, ZHAO Bai jun, ZHANG Yuan tao, LIU Da li, WANG Hai song, YANG Shu ren, DU Guo tong (State key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, CHN);Studies of ZnO films XPS[J];Semiconductor Optoelectronics;2002-06
2 Mao Xiangjun, Yang Zhijian, Li Jing, Qu Jianqin, Zhang Guoyi(Physics Department,Peking University, Beijing\ 100871) Ye Zhizhen, Li Jianguang, Wang Lei, Zhao Binhui(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Receive;Growth of GaN Single Crystal Film on ZnO/Al\-2O\-3 Substrate and Its Characteristics[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-08
3 YE Zhi-zhen,CHEN Han-hong,LIU Rong,ZHANG Hao-xiang and ZHAO Bin-hui(National Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 3100 27,China);Structure and PL Spectrum of ZnO Films Prepared by DC Reactive Magnetron Sputtering[J];Chinese Journal of Semiconductors;2001-08
4 Huang Shulai 1,Ma Jin 1,Liu Xiaomei 2,Ma Honglei 1,Sun Zheng 1 and Zhang Deheng 1(1 School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) (2 School of Computer,Shandong University,Ji'nan 250100,China);Preparation and Properties of Conducting Transparent ZnO-SnO_2 Films Deposited at Room Temperature[J];Chinese Journal of Semiconductors;2004-01
5 Liu Wei,Gu Shulin,Ye Jiandong,Zhu Shunming,Qin Feng,Zhou Xin,Liu Songmin, Hu Liqun,Zhang Rong,Shi Yi and Zheng Youdou(Department of Physics,Nanjing University,Nanjing 210093,China);LP-MOCVD Growth and Properties of Zn_(1-x) Mg_xO Thin Film[J];Chinese Journal of Semiconductors;2004-07
6 JIANG Jian-ming, LOU Li-fei, WANG Jia-you, YANG Yin-tang (Inst of Microelectronics,Xidian University,Xi’an 710071,China);Monolithic integrated MEMS technology[J];Journal of Transducer Technology;2005-03
7 JIN Zhengguo LIU Xiaoxin BU Shaojing CHENG Zhijie (Key Laboratory For Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials ,Tianjin University, Tianjin 300072.);Preparation of Inorganic Compound Thin Films by SILAR Method[J];Materials Review;2003-03
8 MA Yong WANG Wanlu LIAO Kejun ( College of Science. Chongqing University, Chongqing 4000441 Dept. of Physics, Chongqing Normal University, Chongqing 400047);ZnO Film Growth in a Preferred Orientation[J];Materials Review;2003-S1
9 GE Shui\|bing, CHENG Shan\|hua, NING Zhao\|yuan (Films material laboratory of Suzhou university, Suzhou\ 215006,China);Investigation on Characters and Preparation of ZnO:Al Thin Film[J];MATERIALS SCIENCE AND ENGINEERING;2000-03
10 SONG Yong-liang, JI Zhen-guo, WANG Quan-xiang, XIANG Yin, YE Zhi-zhen (State key Laboratory for Silicon Materials,Zhenjiang University,Hangzhou 310027,China);Structural and Optical Properties of ZnO Thin Films Prepared by Sol-gel Technique[J];Journal of Materials Science and Engineering;2004-01
【Secondary References】
Chinese Journal Full-text Database 2 Hits
1 WANG Zi-jian,WANG Hai-yan,GAO Xiao-yong,WU Fang,LI Hong-ju,YANG Gen,LIU Xu-wei,LU Jing-xiao(Key Laboratory of Material Physics of Ministry of Education,Institute of Physics and Engineering,Zhengzhou University,Zhengzhou 450052,China);Research in Electrical and Optical Properties of ZnO:Al Films Prepared by Electron Beam Evaporation[J];Journal of Synthetic Crystals;2006-06
2 CHU Han-qi,LI He-qin,NIE Zhu-hua,DU Zhi,ZHU Jing-chao(School of Materials Science and Engineering,Hefei University of Technology,Hefei 230009,China);LIGHT EMITTING PROPERTIES AND MICROSTRUCTURES OF ALUMINA THIN FILMS[J];Vacuum and Cryogenics;2010-02
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved