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《Chinese Journal of Luminescence》 2001-S1
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Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

WU Jun 1*, ZHAO F H 1, Ito Y 2, Yoshida S 2, Onabe K 1, Shiraki Y 3(1. Graduate School of Frontier Science, The University of Tokyo, 7 3 1 Hongo, Bunkyo ku, Tokyo113 8656, Japan;2. Yokohama R & D Laboratories, The Furukawa Electric Co. Ltd., 2  
Si doped and un do ped cubic GaN were grown by low pressure metalorganic vapor phase epitaxy using a two step growth process. After the deposition of a 20nm thick buffer layer, an about 1μm thick Si doped cubic GaN epitaxial layer was deposited. Doping l evel was determined by secondary ion mass spectroscopy measurements. X ray diff raction and photoluminescence measurements were used to characterize the str uctural and optical quality of the undoped and the Si doped cubic GaN.
【CateGory Index】: TN304
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