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《Chinese Journal of Luminescence》 2001-S1
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Residual Strain Control in AlN and GaN EpilayerGrown on 6H-SiC Substrate Using (GaN/AlN)Multi Buffer Layers by Low pressure MOVPE

Horie M , Ishihara Y, Takano T, Kawanishi H(Department of Electronic Engineering, Kohgakuin University, 2665 1 Nakano machi, Hachiohji shi, Tokyo192 0015, Japan)  
BAlGaN quaternaries were proposed for use as light emitting devices operating i n the ultraviolet spectral region. GaN and AlN binaries seem to be the basic material for the device applications of the quaternary. A 6H SiC substrate has an advantage in its small lattice mismatch to the nitride s and a thermal expansion coefficient of the SiC substrate is close to that of A lN. However, residual strain control of the AlN epitaxial layer is needed, becau se compressive strain, which was originated in the lattice mismatch to the subst rate, was included in the AlN epitaxial layer directly grown on the SiC substrat e. On the other hand, GaN epitaxial layer includes tensile strain, when the GaN is grown directly on the SiC substrate. The origin of the tensile strain is beli eved to be the larger thermal expansion coefficient of the GaN than that of the substrate. In this paper, effective control of the types and amount of the resid ual strain in the epitaxial layers are discussed for the 6H SiC substrate. For th is purpose, the (GaN/AlN) multi buffer structure is proposed as an effective too l for not only an AlN but also a GaN layer grown on the 6H SiC substrate. Also we discuss the relationship between the residual strain and the crystalline quality for an AlN and a GaN epitaxial layer.
【Fund】: ProjectsupportedbyGrants InAid (No .1175 0 0 2 0andNo.116 5 0 35 4)fromtheMinistryofEducation ;;Science;;SportsandCulture ;;andHigh TecResearchCenterinPrivateUniversities .Thisworkwascarriedoutasapartofthe“ResearchforFuture” Program (JSPS RFTF97P0 0 1
【CateGory Index】: TN304
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