Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Chinese Journal of Luminescence》 2001-S1
Add to Favorite Get Latest Update

Effect of TMGa Molar Flow Rate of GaN Buffer on Subsequent GaN Epilayers and the Buffer Growth Model

CHEN Zhen, YUAN Hai rong, LU Da cheng, WANG Xiao hui, LIU Xiang lin, HAN Pei de, WANG Du, WANG Zhan guo (Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing100083, China)  
The GaN films were grown on different buffer layer that was deposited with dif fe rent Trimethylgallium (TMGa) molar flow rate (F TMGa) by metalorganic v apor phase epitaxy (MOVPE). The samples were measured by X ray Diffraction (XR D), and photoluminescence (PL). The results indicated that the GaN epilayer grown on bu ffer that was deposited under higher F TMGa condition had better qualit y. Atomic force microscopy (AFM) analysis of the buffer layer showed that the gr owth model was different for various F TMGa growth condition. A model o f GaN buffer layer growth process was proposed.
【Fund】: 国家自然科学基金资助项目 ( 6 0 0 86 0 0 1);; 国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83)~~
【CateGory Index】: TN304
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved