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《Chinese Journal of Luminescence》 2001-S1
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Effects of GaAs Substrate Nitridation with N_2-H_2 Plasma on c-GaN Epitaxy Growth by ECR-PEMOCVD

WANG San sheng 1, GU Biao 1,2, XU Yin 1,2, QIN Fu wen 1,2, SUI Yu 1,2, YANG Da zhi 2,3 (1. Department of Electrical Engineering and Applied Electronics, Dalian Univers ity of Technology, Dalian116024, China;2. National Key Laboratory of Material  
The effects of nit ridation conditions to GaAs (001) substrates in N 2 H 2 plasmas on c G aN film grown by electron cyclotron resonance plasma enhanced metalorganic c hemi cal vapor deposition (ECRPE MOCVD) was investigated. It was found that there ha ve remarkable effects on the growth of c GaN film when hydrogen plasma was added during nitridation. XRD (θ-2θ) analysis showed that the FWHM of epit axy film grow ing with hydrogen plasma during nitridation was improved exceeds 40% compared wi th that of epitaxy film growing without hydrogen plasma during nitridation. Atom ic force microscopy (AFM) observation showed that the surface of buffer layers becomes smoother a nd the crystallites become larger when nitridated in N 2 H 2 plasmas. We thin k that the uniform nucleation of GaAs (001) substrate surface is a crucial facto r for getting better crystalline quality of c GaN. Finally, a chemical mode l is put forward to interpret the influence of hydrogen plasma during the ni tridation process.
【Fund】: 国家自然科学基金资助项目 ( 6 9976 0 0 8)~~
【CateGory Index】: TN304
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1 WANG San-sheng 1,3, GU Biao 1, XU Yin 1, XU Jiu-jun 2, QIN Fu-wen 1, YANG Da-zhi 3 (1. Department of Electrical Engineering and Applied Electronics, Dalian University of Technology, Dalian 116024, CHN; 2. Institute of Metal Materials and;Preparation of GaN Quantum Dots on GaAs (001) Substrate by ECR-PEMOCVD[J];Semiconductor Optoelectronics;2002-02
2 SUN Wan-feng,GU Biao,XU Yin,QIN Fu-wen,MA Shi-meng(State Key Laboratory of Material Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian 116024,CHN);Influence of Nitriding Technology on Growth of GaN Buffer[J];Semiconductor Optoelectronics;2006-02
3 ZHANG Wei, LIU Cai-chi, HAO Qiu-yan (School of Materical Science and Engineering, Hebei University of Technology, Tianjin 300130, China);The Development of the Study on Selectively Growth of GaN[J];Semiconductor Technology;2007-02
4 YANG Hong wei,YAN Fa wang,ZHANG Qi lin (Hebei Semiconductor Research Institute,Shijiazhuang 050051,China);GaN film grown by low-pressure MOCVD[J];Semiconductor Information;2001-06
5 Qin Fuwen 1,2,Gu Biao 1,2,Xu Yin 1,2 and Yang Dazhi 3(1 National Laboratory of Material Modification by Three Beams,Dalian University of Technology,Dalian 116024,China) (2 Department of Electrical Engineering and Applied Electronics,Dalian University of Technology,Dalian 116024,China) (3 Department of Material Science and Engineering,Dalian University of Technology,Dalian 116024,China);Study of ECR-Plasma Cleaning and Nitridation of Sapphire Substrate by RHEED[J];Chinese Journal of Semiconductors;2003-06
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10 LI Xue~1,CHEN Jun~1,HE Zheng~1,ZHAO De-gang~2,GONG Hai-mei~1,FANG Jia-xiong~1(1.State Key Laboratories of Transducer Technology,Shanghai Institute of technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;2.Beijing Semiconductor Institute,Chinese Academy of Sciences,Beijing 100083,China);Solar-blind GaN-based UV Detectors with Two Structures[J];Laser & Infrared;2006-11
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