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《Chinese Journal of Luminescence》 2001-S1
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Observation of Morphology Development in Initial Growth Stage of GaN

YUAN Hai rong, CHEN Zhen, LU Da cheng, LIU Xiang lin, HAN Pei de, WANG Xiao hui, WANG Du(Laboratory of Semiconductor Materials Science, Institute of Se mi conductors, Chinese Academy of Sciences, Beijing100083, China)  
Morphology of GaN in initial growth stage was observed. It was found that GaN ep ilayer evolved from separate islands to coalesced film. Development of morphol ogy indicated that GaN experienced a lateral growth dominant stage. Histograms o f epilayers height distribution were derived from morphology observation. It w as found that the histograms could be well fitted with multi peak Gaussian dist ribution. The multi peak feature of histograms was interpreted in relation to morphology characteristics.
【Fund】: 国家自然科学基金资助项目 ( 6 0 0 86 0 0 1;;6 990 6 0 0 2 ) ;; 国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83)~~
【CateGory Index】: TN304
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