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《Chinese Journal of Luminescence》 2001-S1
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Investigation on Polarity of GaN/Al_2O_3Heterostructure Grown by MOVPE

HAN Pei de, LIU Xiang lin, WANG Xiao hui, WANG Du, LU Da cheng, WANG Zhan guo(Laboratory of Semiconductor Materials Science, Institute of Se miconductors, Chinese Academy of Sciences, Beijing100083, China)  
GaN films grown in pairs on two opposite c faces of Al 2O 3 substrate by low pressure metal organic vapor phase epitaxy (MOVPE) have been studied by sc anning electron microscopy (SEM) and converged beam electron diffraction (CBED). It is found that the GaN film on the c Al 2O 3 whose c face is forward to its c rystal seed has polarity, and the other film on the c Al 2O 3 whose c face is backward to its crystal seed has [000[KG-3]1
【Fund】: 国家自然科学基金资助项目 ( 6 0 0 86 0 0 1);; 国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83)~~
【CateGory Index】: TN304
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