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《Chinese Journal of Luminescence》 2001-S1
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Photoluminescence and Absorption in InGaN Filmswith InN Segregation

CHEN Zhi zhong, QIN Zhi xin, YANG Zhi jian, TONG Yu zhen, DING Xiao min, ZHANG Guo yi(Department of Physics, Mesoscopic Physics National Key Laboratory, Peking Un iversity, Beijing100871, China)  
InGaN/GaN layers have been grown under low pressure by metalorganic vapor phase epitaxy on sapphire substrate. X ray diffraction (XRD), photoluminescence (PL) , absorption measurements have been applied to study the radiative recombination mechanisms in the samples. The In composition is determined by XRD measurement using Vegard's law. With In composition increasing, a red shift of absorption e dge and a broad Urbach tail in absorption spectra are observed. Low energy emiss ion is dominant in PL spectra as well, and InGaN peaks in PL excitation spectra are broadened too. We suggest that the piezoelectric effect changed the band str uctures of InGaN, which affects on the optical absorption behavior. Radiative re combination in the InN quantum dots are attributed to the origin of emission of InGaN layer.
【Fund】: 国家自然科学基金资助项目 ( 6 9876 0 0 2 )~~
【CateGory Index】: TN304
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【References】
Chinese Journal Full-text Database 1 Hits
1 Zhu Hua1,2,,Li Cuiyun2,Mo Chunlan1,Jiang Fengyi1,and Zhang Meng1(1 Education Ministry Engineering Research Center for Luminescence Materials and Device,Nanchang University,Nanchang 330047,China)(2 Jingdezhen Ceramics Institute,Jingdezhen 333001,China);TEM Characterization of Defects in GaN/InGaN Multi-Quantum Wells Grown on Silicon by MOCVD[J];Journal of Semiconductors;2008-03
【Co-references】
Chinese Journal Full-text Database 2 Hits
1 Li Cuiyun~(1,2,+),Zhu Hua~(1,2),Mo Chunlan~1,and Jiang Fengyi~1(1 Education Ministry Engineering Research Center for Luminescence Materials and Devices,Nanchang University,Nanchang 330047,China) (2 Jingdezhen Ceramics Institute,Jingdezhen 333001,China);Microstructure of an InGaN/GaN Multiple Quantum Well LED on Si(111) Substrate[J];Chinese Journal of Semiconductors;2006-11
2 Mukai T *, Nagahama S, Iwasa N, Senoh M, Matsushita T, Sugimoto Y, Kiyoku H, Kozaki T, Sano M, Matsumura H,Umemoto H, Chocho K(Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774 8601, Japan);InGaN-based Light-Emitting Diodes and Laser Diodes[J];Chinese Journal of Luminescence;2001-S1
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