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《Chinese Journal of Luminescence》 2001-S1
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InN Segregation in InGaN Layers Grown by Metalorganic Chemical Vapor Deposition

QIN Zhi xin, CHEN Zhi zhong, TONG Yu zhen, LU Shu, ZHANG Guo yi (Department of Physics, Mesoscopic Physics National Key Laboratory, Peking Un iversity, Beijing100871, China)  
The amount of InN segregated in InGaN films grown by MOCVD was estimated b y X ray diffraction measurement technology. In compositions in the InGaN films are measured as 0 1~0 34 by X ray 2θ scan using Vegard's law. The inclu sion o f InN in InGaN layers was obtained as 0 068 4%~2 639 6% by measuring the ratio of the integrated intensities of InN (0002) peak to that of InGaN (000 2) peak in X ray rocking curves. The theoretical diffraction intensities fr om I nN and InGaN have been calculated according to the X ray diffraction theory. Th e values of InN inclusion for all the samples were less than 3%, which ind icate that degree of phase separation of the samples was low. It was also found that the flow rate of N 2 carrier gas and operation pressure strongly affect t he InN inclusion in InGaN.
【Fund】: 国家自然科学基金资助项目 ( 6 9876 0 0 2 )~~
【CateGory Index】: TN304
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