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《Chinese Journal of Luminescence》 2001-S1
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InGaN-based Light-Emitting Diodes and Laser Diodes

Mukai T *, Nagahama S, Iwasa N, Senoh M, Matsushita T, Sugimoto Y, Kiyoku H, Kozaki T, Sano M, Matsumura H,Umemoto H, Chocho K(Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774 8601, Japan)  
In spite of large number of dislocations, the efficiency of the InGaN based lig ht emitting diodes (LEDs) are high enough. It is important to use InGaN as an a ctive layer. In InGaN LEDs, higher power is needed to be used for general light ing. Laser diodes (LDs) grown on epitaxially laterally overgrown GaN (ELOG), free standing GaN, and ELOG grown on thick GaN substrate were fabricated. The LD gr own on the ELOG grown on thick GaN substrate showed an operating current as low as 42mA under CW 30mW operation and a case temperature of 25℃, and exhibite d an estimated lifetime of 15 000h under CW 30mW operation and case temperat ure of 60℃. These results show that reducing the threading dislocation density extends the lifetime of LD. In addition, it is important to make heat dissipat ion better.
【CateGory Index】: TN318
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