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《Chinese Journal of Luminescence》 2001-S1
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Structural Properties of Laterally Overgrown GaN

ZHANG Rong 1, GU Shu lin 1, XIU Xiang qian 1, LU Dian qing 1,SHEN Bo 1, SHI Yi 1, ZHENG You dou 1, Kuan T S 2( 1 Department of Physics, Nanjing University, Nanjing210093, Chin a;2 Department of Physics, State University of New York at Al  
Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated. T he epitaxially lateral overgrowth of GaN on SiO 2 areas is realized and a plana r ELO GaN film is obtained. Scanning electron microscope, transmission electron microscope (TEM) and atomic force microscope (AFM) are used to study the structu re and surface morphology of the ELO GaN materials. AFM images indicate that no observable step termination is detected over a 4μm 2 area in the ELO regio n. T EM observations indicate that the dislocation density is very low in the ELO reg ion. No void at the coalescence interface is observed. Lattice bending as high as 3 3° is observed and attributed to pileup of threading dislocations coming fro m the underlying GaN "seeding layer" and tilting horizontally and quenching at the coalescence interface.
【Fund】: 国家“8 6 3”基金资助项目 ( 2 0 0 0 0 6 83);; 国家自然科学基金资助项目 ( 6 9976 0 14 6 96 36 0 10 6 980 6 0 0 6 6 99870 0 1)~~
【CateGory Index】: TN304
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