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《Chinese Journal of Luminescence》 2001-S1
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Capacitance Voltage Properties of a Pb(Zr_(0.53)Ti_(0.47))O_3Ferroelectric Film on Al_xGa_(1-x)N/GaN Heterostructure

SHEN Bo 1, LI Wei ping 1, ZHOU Yu gang 1, BI Zhao xia 1, ZHANG Rong 1,ZHENG Ze wei 1, LIU Jie 1, ZHOU Hui mei 1, SHI Yi 1, LIU Zhi guo 1, ZHENG You dou 1, Someya T 2, Arakawa Y 2(1 Department of Physics and National Laboratory of  
The Al xGa 1-xN/GaN based metal ferroelectric semiconductor (MF S) structure was fabricated by depositing a ferroelectric Pb (Zr 0 53 Ti 0 47) O 3 (PZT) film on a modulation doped Al\-\{0 22\}Ga\-\{0 78\}N/Ga N heterostructure.In the high frequency capacitance voltage (C V) measure ment,it is found that the sheet concentration of the two dimensional electron g as (2DEG) at the Al 0 22Ga 0 78N/GaN heterointerface decreases from 1 56×10 13cm -2 to 5 6×10 12cm -2 under the -10V appli ed bias after the PZT film is deposited on the Al 0 22Ga 0 78N/GaN h e terostructure. Due to the ferroelectric polarization of the PZT film, a ferroele ctric C V window of 0 2V in width near -10V is observed,indicating that th e Al xGa 1-xN MFS structure can achieve memory performance without th e reversal of the ferroelectric polarization.Due to their numerous advantages b rought by the 2DEG,Al xGa 1-xN heterostructures are the promising semiconductor chan nel candidates for the MFS field effect transistor.
【Fund】: 国家自然科学基金资助项目 ( 6 980 6 0 0 6 6 9976 0 14和 6 99870 0 1) ;; 国家重点基础研究项目专项支持 (G2 0 0 0 0 6 83) ;; 国家 高技术研究和发展项目;; 日本科学促进协会前沿研究项目 (JSPS RFTF96P0 0 2 0 1)~~
【CateGory Index】: TN304
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