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《Chinese Journal of Luminescence》 2001-S1
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Piezoelectric Polarization Effect in Al_xGa_(1-x)N/GaN Heterostructures through Capacitance Voltage Method

ZHOU Yu gang 1, SHEN Bo 1, YU Hui qiang 1, ZHANG Rong 1, LIU Jie 1, ZHOU Hui mei 1, SHI Yi 1, ZHENG You dou 1, Someya T 2, Arakawa Y 2 (1 Department of Physics, Nanjing University, Nanjing210093, Chin a;2 Research Center for Advanced  
Pt/Al 0 22Ga 0 78N/GaN Schottky diodes were prepared based on modula tion doped Al 0 22Ga 78N/GaN heterostructures. The capacitance v oltage profilings of the diodes with various thickness of the Al 0 22Ga 0 78N barrier sh ow significant differences due to the change of the polarization field in these samples. Numerical simulation based on the experimental results indicates that the sheet density of the polarization induced charges at the heterointerface is 6 78×10 12cm -2 in the samples with the Al 0 22Ga 0 78N thickness of 30nm or 45nm. The charge density reduces to 1 30×10 12cm -2 in the sample with the Al 0 22Ga 0 78N thickness of 75nm. It is thought that the reduction of the polarization induced charges at the heter ointerface is due to the partial relaxation of the Al 0 22Ga 0 78 N l ayer on GaN. This work also provides a technique for quantitative characterizati on of the polarization charge in Al xGa 1-xN/GaN heterostructures
【Fund】: 国家自然科学基金资助项目 ( 6 980 6 0 0 6 6 9976 0 41和 6 99870 0 1) ;; 国家重点基础研究课题专项支持 (G2 0 0 0 0 6 83) ;; 国家 高技术研究和发展项目;; 日本科学促进协会前沿研究项目 (JSPS RFTF96P0 0 2 0 1)~~
【CateGory Index】: TN304
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