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《Chinese Journal of Luminescence》 2001-S1
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AlGaInN High Power Lasers Grown on ELO-GaN

Ikeda M *, Uchide S(Development Center, Sony Shiroishi Semiconductor Inc. 3 53 2 Shiratori, Shi roishi shi, Miyagi ken 989 0734, Japan)  
Dislocation densit y and facet roughness of AlGaInN laser diodes were improved significantly by mak ing the laser stripes just above the laterally grown regions of ELO GaN basal l ayer. As a result, the lifetime of the laser diodes was demonstrated to be more than thousand hours under 30mW CW operation at 50℃.
【CateGory Index】: TN304
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