AlGaInN High Power Lasers Grown on ELO-GaN
Ikeda M *, Uchide S(Development Center, Sony Shiroishi Semiconductor Inc. 3 53 2 Shiratori, Shi roishi shi, Miyagi ken 989 0734, Japan)
Dislocation densit y and facet roughness of AlGaInN laser diodes were improved significantly by mak ing the laser stripes just above the laterally grown regions of ELO GaN basal l ayer. As a result, the lifetime of the laser diodes was demonstrated to be more than thousand hours under 30mW CW operation at 50℃.
【CateGory Index】： TN304