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《Chinese Journal of Luminescence》 2001-S1
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MOVPE Growth of Ⅲ-N Materials with Large Area (21×2″) Vertical Rotating Disk Reactors

Ramer J , Parekh R, Ronan B, Loftus C, Gurary A(MECORE Corporation, 394 Elizabeth Ave., Somerset NJ08873, USA)  
In order to redu ce the cost of Ⅲ N based materials and devices, la rge scale Ⅲ N MOVPE growth reactors must be developed. An EMCORE vertical rot a ting disk reactor (RDR), with a 325mm diameter SiC coated graphite wafer carrier is reported here. The wafer carrier holds two concentric circles of wafers; in total 21×2″ substrates can be loaded at one time for deposition. The interio r su rfaces of the reactor are water cooled, and maintained at temperatures between 5 0~60℃. The wafers are heated by resistive heating, and uses rotating speeds be tween 1 000~1 500 rpm during the deposition. The results of undoped GaN, InGaN and p GaN epitaxial layers grown in the 325mm RDR GaN systems are reported in the paper. These results show that the RDR r eactor technology scales very efficiently to larger disk sizes, even for the cha llenging Ⅲ N material system. The quality of the material grown on the larger reactor is comparable to that grown on the smaller reactors. The 325mm GaN reac tor will result in very significant decreases in production costs for manufactur ing Ⅲ N epitaxial material for blue and green LED applications
【CateGory Index】: TN304.055
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