Close Coupled Showerhead Reactors for the Growth of Group Ⅲ Nitrides
Thrush E J 1*, Kappers M 2, Considine L 1, Mullins J T 1, Saywell V 1, Bentham F C 1, Sharma N 2, Humphreys C J 2(1 Thomas Swan Scientific Equipment Limited, Buckingway Business Pa rk, Cambridge CB45UG, UK;2 Department of Materials Science an
The group Ⅲ nitrides are an important class of materials with appli cations in UV and visible optoelectronics, high temperature electronics, cold ca thodes and solar blind detectors. In recent years, with the realisation of nitri de based LEDs, the use of GaN LED has the potential to compete with traditional filament and discharge lamps, for the provision of white lighting, and there has been an explosion of interest in the MOCVD growth of GaN based materials with a n increasing focus on large area multiwafer reactors and wafer uniformity. This paper will review the design philosophy and characteristics of close couple d sh owerhead reactors, relating these to the requirements of group Ⅲ nitride growt h , and will present a selection of data resulting from the operation of such equi pment. These results suggest that the close coupled showerhead style of reactor is very suitable for the growth of GaN based structures in both research and pro duction environments.
【CateGory Index】： TN304