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《Chinese Journal of Luminescence》 2012-12
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Study of New Transparent Conductive Film with Erbium Fluoride Doped Indium Oxide

ZHANG Jian-nan1,2,LI Yan-tao1,FAN Yi1,LIU Xing-yuan1(1.State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics, Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China; 2.University of Chinese Academy of Sciences,Beijing 100039,China)  
ErF3 doped indium oxide(IEFO) transparent conductive film was fabricated by electron beam evaporation.The optical,electrical characteristics and crystal structure of the IEFO film were studied.The IEFO film is polycrystalline structure,the introduction of Er changes the preferred orientation of lattice and makes the growth tendency of the(211),(222),(444) similar.The IEFO film shows a resistivity of 1.265×10-3 Ω·cm,a carrier mobility of 45.76 cm2·V-1·s-1,a carrier concentration of 1.197×1020 cm-3,and the optical transmittance of 81% at the range of 380~780 nm.The surface morphology of IEFO film in different thickness was tested by atomic force microscope and the growth process was discussed.
【Fund】: 国家自然科学基金(51102228);; 吉林省科技发展计划(20100570)资助项目
【CateGory Index】: TN304
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