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《Chinese Journal of Luminescence》 2013-01
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Ga-doped and P-doped ZnO Films Grown by MOCVD

YIN Wei,ZHANG Jin-xiang,CUI Xi-jun,ZHAO Wang,WANG Hui, SHI Zhi-feng,DONG Xin,ZHANG Bao-lin*,DU Guo-tong(State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)  
Gallium-doped zinc oxide(ZnO∶Ga) and phosphorus-doped zinc oxide(ZnO∶P) films were separately prepared on Al2O3 substrates by metal organic chemical vapor deposition(MOCVD) method.The microstructure,electrical and optical properties were studied by X-ray diffraction(XRD),scanning electron microscopy,Hall effect measurement,the room temperature photoluminescence(PL) spectrum,respectively.The n-type ZnO films with a carrier concentration of 1×1019 cm-3 and p-type films with carrier concentration of 1.66×1016 cm-3 were obtained.SEM images showed the films had highly oriented columnar structure.PL spectrum displayed p-type ZnO films showed good optical qualities.
【Fund】: 国家“973”计划第五课题(2011CB302005 61076045 61006006)资助项目
【CateGory Index】: TN304.055
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