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《Chinese Journal of Luminescence》 2015-01
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1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy

ZHOU Yong;DUAN Li-hua;ZHANG Jing;LIU Shang-jun;HAN Wei-feng;HUANG Mao;Chongqing Optoelectronics Research Institute;Department of Applied Physics,Chongqing University;  
Theoretical analyses of growing processes were made in the case of superluminesecnt diode with crescent structure by liquid phase epitaxy(LPE),which could perfectly explain some phenomena in experiments of LPE on curved In P surfaces. The results of numerical calculation were consistent with the experimental results. The epitaxy structure was optimized to enhance the output power and reduce the polarization of the SLD. As a result,polarization dependence as low as 2%and 3. 6 m W output power were obtained at 100 m A and 25 ℃ heat-sink temperature,corresponding to 39 nm spectral width with spectral modulation of less than 0. 17 d B.
【Fund】: 国家自然科学基金(11304405)资助项目
【CateGory Index】: TN312.8
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