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《Chinese Journal of Luminescence》 2015-01
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Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector

ZHAO Xu;MIAO Guo-qing;ZHANG Zhi-wei;ZENG Yu-gang;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences;University of Chinese Academy of Sciences;  
The near-infrared detector of In0. 82Ga0. 18 As with PIN structure was designed and simulated by APSYS. The long-wave cutoff wavelength was extended to 2. 6 μm. Three doped layers were deposited on the absorption layer,which contained P type N type,N type and by growth order. The thickness and concentration of each doped layer in cap layer were analyzed. The results show that In0. 82Ga0. 18 As,In As0. 6P0. 4and In0. 82Al0. 18 As layers by growth order are determined to obtain the excellent performance. The relative spectral responsivity of the detector keeps almost the same,and dark current decreases by one magnitude compared with the PIN structure. The defect tunneling current predominates when the detector works at 120- 250 K,the inter-band tunneling current dominates the dark current when the detector works at 250- 300 K,and the G-R current and diffusion current dominates the dark current when the detector works above 300 K.
【Fund】: “973”国家重点基础研究发展计划(2012CB619201)资助项目
【CateGory Index】: TN215
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