Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Chinese Journal of Luminescence》 2015-01
Add to Favorite Get Latest Update

Structural Design and Optimization of Novel Composite Cap Extended Wavelength InGaAs Infrared Detector

ZHAO Xu;MIAO Guo-qing;ZHANG Zhi-wei;ZENG Yu-gang;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences;University of Chinese Academy of Sciences;  
The near-infrared detector of In0. 82Ga0. 18 As with PIN structure was designed and simulated by APSYS. The long-wave cutoff wavelength was extended to 2. 6 μm. Three doped layers were deposited on the absorption layer,which contained P type N type,N type and by growth order. The thickness and concentration of each doped layer in cap layer were analyzed. The results show that In0. 82Ga0. 18 As,In As0. 6P0. 4and In0. 82Al0. 18 As layers by growth order are determined to obtain the excellent performance. The relative spectral responsivity of the detector keeps almost the same,and dark current decreases by one magnitude compared with the PIN structure. The defect tunneling current predominates when the detector works at 120- 250 K,the inter-band tunneling current dominates the dark current when the detector works at 250- 300 K,and the G-R current and diffusion current dominates the dark current when the detector works above 300 K.
【Fund】: “973”国家重点基础研究发展计划(2012CB619201)资助项目
【CateGory Index】: TN215
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【Co-citations】
Chinese Journal Full-text Database 3 Hits
1 Xia LIU;Lianzhen CAO;Hong JIANG;Hang SONG;Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation,Department of Physics and Optoelectronic Engineering,Weifang University;Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences;;STUDY OF ELECTRICAL PROPERTIES OF In_(0.82)Ga_(0.18)As AT LOW TEMPERATURE[J];Chinese Journal of Low Temperature Physics;2014-06
2 XU Rui;HE Zhi-Ping;CHEN Kai;ZHANG Hu;FU Zhong-Qian;WANG Jian-Yu;Dept.of Electronic Science and Technology,University of Science and Technology of China;Key Laboratory of Space Active Opto-Electronics Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences;;Temperature characteristics of SWIR spectrometer based on AOTF and data pre-processing model for deep-space exploration application[J];Journal of Infrared and Millimeter Waves;2014-03
3 WANG Yun-Ji;TANG Heng-Jing;LI Xue;SHAO Xiu-Mei;YANG Bo;DENG Shuang-Yan;GONG Hai-Mei;State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences;Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences;University of Chinese Academy of Sciences;;Performance of InGaAs detector with SiN diffusion mask[J];Journal of Infrared and Millimeter Waves;2014-04
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved