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《Chinese Journal of Luminescence》 2017-09
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Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors

YUE Zhi-fu;WU Yong;LI Xi-feng;YANG Xiang;JIANG Shu;XU Yun-long;School of Materials Science and Engineering,Shanghai University;Key Laboratory of Advanced Display and System Applications of Ministry of Education,Shanghai University;Tianma Micro-electronics Co.,Ltd.;  
The bias stability of the flexible thin-film transistors under various bending radii was investigated. The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate. The changing region of the bending radius was from 15 mm to 3mm. For the stretch bending,the threshold voltage kept the same with the flat( Vth=-1. 34 V),the mobility reduced from 45. 65 cm~2/( V·s) to 45. 17 cm~2/( V·s),and Ion/Ioffincreased. For the compress bending,the transfer curve well kept the same with the flat. When the minimum bending radius was 3 mm,the device was tested under the positive and negative bias stress,and showed good stability. The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.
【Fund】: 国家高技术研究发展计划(863)(2015AA033406);; 上海科学技术委员会项目(16JC1400602)资助~~
【CateGory Index】: TN321.5
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