Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《CHINESE JOURNAL OF LUMINESCENCE》 1998-02
Add to Favorite Get Latest Update

OPERATING CHARACTEISSTICS OF InGaAsP/InGaP/GaAsSINGLE QUANTUM WELL HIGH POWER LASERS

Liu Yumei Wang Lijun Wu Shengli Liu Yun Fu Dehui(Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021)(Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021 )  
nGaAsP/InGaP/GaAs single quantum well high power lasers was made by LPMOCVD and the dependences of threshold current density, characterisitic temperature and reciprocal differential quantum efficiency on cavity length were researched.
【Fund】: 国家自然科学基金 “863”计划资助 中国科学院院长基金
【CateGory Index】: TN248.4
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 1 Hits
1 YANG Jin hua,ZHANG Xing de,REN Da cui (State Key Laboratory of High-power Semiconductor Lasers, Changchun Institute of Optics and Fine Mechanics, Changchun 130022,China);Al-free High Power Semiconductor Lasers[J];SEMICONDUCTOR OPTOELECTRONICS;2000-02
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 ZHU Jing-yi (Dept.of Physics,Qinghai Teachers College, Xining 810007,China);Analysis of Transient Response Characteristics for Multi-quantum-well Lasers[J];SEMICONDUCTOR OPTOELECTRONICS;2000-05
2 YU Jinzhong WANG Qiming(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN);Advances in optoelectronics showcased at CLEO'97[J];SEMICONDUCTOR OPTOELECTRONICS;1998-03
3 REN Dacui WANG Yuxia WANG Ling CONG Sen (Changchun Institute of Optics and Fine Mechanics,Changchun 130022,CHN);Threshold current and external quantum efficiency of quantum well lasers[J];SEMICONDUCTOR OPTOELECTRONICS;1998-05
4 GAO Feng, WU Lin-zhang (Department of precision instruments, Tsinghua University, Beijing 100084, China);Low threshold current and high quantum efficiency ridge waveguide lasers[J];Semiconductor Technology;2001-06
5 YANG Wen ge LI Zheng (Beijing University of Aeronautics and Astronautics,Dept. of Electronic Engineering);Pspice Circuit Temperature Model of the Quantum Well Laser[J];JOURNAL OF BEIJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS;2000-02
6 ZHANG Su mei 1, SHI Jia wei 1, ZHAO Shi shun 2, HU Gui jun 1 (1. College of Electronics Science and Engineering, Jilin University; National Integrated Opto electronics Key Laboratory, Jilin University, Changchun*"130023, China; 2. College of Mathematics, Jilin University, Changchun*"130012, China);High-power AlGaAs/GaAs Single Quantum Well (SQW) Remote Junction Lasers and Its Aging Characteristic[J];Chinese Journal of Luminescence;2004-03
7 Wang Lijun Wu Shengli Liu Yun Fu Dehui Liu Yumei(Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021)(Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021);808nm AlFREE HIGH POWER LASER[J];CHINESE JOURNAL OF LUMINESCENCE;1997-04
8 YAN Min hui, CHEN Jian ping, LI Xin (The State Key Laboratory on Fiber Optic Local Area Communication Networks and Advanced Optical Communication Systems,Shanghai Jiao Tong University,Shanghai 200030,China);Temperature Dependence of the Electro-optical Properties of Single Quantum Well Laser Diodes[J];Journal of Optoelectronics.laser;2001-05
9 ZOU De shu, LIAN Peng, XU Chen, CUI Bi feng, DU Jin yu, ZHANG Li, LIU Ying, LI Jian jun, SHEN Guang di (Beijing Optoelectronic Technology Lab,Beijing Polytechnic University,Beijing 100022,China);Study on Kinks in P-I Characteristic Curves of Semiconductor Quantum-well Stripe Geometry Lasers[J];Journal of Optoelectronics.laser;2002-06
10 Zhang Yejin, Chen Weiyou, Liu Caixia, Wang Aijun, Jiang Heng, Liu Shiyong (Department of Electronics Engineering, Jilin University, Changchun 130023);A CAD Software for MQW Laser Analysis[J];High Technology Letters;2001-02
【Secondary References】
Chinese Journal Full-text Database 4 Hits
1 CHEN Hong-tai1,LIU Ying-bin1,HUA Ji-zhen1,2,AN Zhen-feng1,2(1.The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,CHN;2.Hebei University of Technology,Tianjin 300130,CHN);Research on 808 nm Al-free Active Region Laser Diodes[J];Semiconductor Optoelectronics;2008-04
2 Li Yajing1,2,An Zhenfeng2,Chen Guoying1,Wang Xiaoyan2,Du Weihua1,2 (1.Dept.Info & Engi,Hebei University of Technology,Tianjin 300130,China;2.The 13th Research Institute,CETC,Shijiazhuang 050051,China);Study on the Mean Lifetime Comparison of Al-Containing and Al-Free High Power Semiconductor Laser Diodes[J];Semiconductor Technology;2009-01
3 SHAN Cheng-yu (Changchun University of Science and Technology Seience and Technology Develop Center,Changchun 130022,China);Temperature's Effect on Semiconductor Laser Performance Parameter[J];Jilin Normal University Journal (Natural Science Edition);2003-04
4 LI Jun-xia~1, GUO Shao-hua~1, GE Chun-feng~2(1.School of Sciences, Tianjin Polytechnic University, Tianjin 300160, China; 2.School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300172, China);A parameter measurement device of semiconductor LD based on the single-chip system[J];Journal of Tianjin Institute of Textile Science and Technology;2005-03
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved