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Zhao Xiaowei Fan Xiwu Zhang Jiying Yang BaojunYu Guangyou Shen Dezhen(Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021)(Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021)  
nSe epilayers were successfully grown on GaAs(100) substrate by photoassisted MOCVD at 350℃. Xray diffraction spectrum and PL showed spectra a high quality of ZnSe epilayer. Irradiation intensity affected the characteriztation of growth and luminescence.
【CateGory Index】: TN304.055
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1 Li Huanyong 1,2 and Jie Wanqi 1(1 State Key Laboratory of Solidification Processing,Northwest Polytechnical University,Xi'an 710072,China) (2 Department of Chemistry,Northwest University,Xi'an 710069,China);Synthesis and Characteristics of ZnSe One-Dimension Nanocrystals[J];Chinese Journal of Semiconductors;2003-01
2 CAO Chuan-bao,LIU Si-yuan,L(U)·· Rui-tao,LI Jing-hua,ZHU He-sun(School of Material Science and Engineering, Beijing Institute of Technology, Beijing100081, China);One-Step Hydrothermal Preparation of ZnSe Nanorods and Their Characterization[J];Journal of Beijing Institute of Technology;2004-10
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7 Zhou Yuxian1, Fang Zhenyi2, Pan Wei2, Yang Yaoyuan1, Zhang Liqiang1, Wang Xiangyang1, Xiao Hongtao1 (1. Reserch Institute of Synthetic Crystals, Beijing 100018,China) (2. Tsinghua University, Beijing 100084,China);Fabrication of Polycrystalline ZnSe by Chemical Vapor Deposition and Its Properties[J];Rare Metal Materials and Engineering;2005-02
8 FAN X W(Key Latoratory of Excited State Processes, Chinese Academy of Sciences; Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, China);Research Progress on Growth and Optical Properties of Wide Band Gap Ⅱ-Ⅵ Compound Semiconductors and Its Low Dimensional Structure[J];Chinese Journal of Luminescence;2002-04
9 ZHAO Xiao-wei, FAN X W, ZHANG Ji-ying, SHAN Cong-xin, ZHANG Zhen-zhong, YANG Yi, LU You-ming, LIU Yi-chun, SHEN De-zhen(Key Laboratory of Excited State Processes, Chinese Academy of Sciences; Changchun Institute of Optics, Fine Mechanics and Physics, Chi;Growth of ZnSe Epilayers on Silicon Substrate by LP-MOCVD[J];Chinese Journal of Luminescence;2002-04
10 XUE Da-shun, WU Hong-cai (Photoelectric and Solar Energy Institute, Xi'an Jiaotong university, Xi'an 710049, China);Research Development of Growth Methods of ZnSe[J];Optoelectronic Technology & Information;2004-02
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