Effect of low temperature buffer layer of GaN films deposited on diamond substrate
ZHANG Dong;ZHAO Yan;SONG Shiwei;LI Yucai;WANG Jian;BI Xiaoguo;New Energy Institute of Shenyang Institute of Engineering;
Ga N films were deposited on freestanding diamond substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD) technique with various buffer layer deposition temperature. The effect of buffer layer deposition temperature on the quality of Ga N flim was studied using reflection high energy electron diffraction(RHEED), X-ray diffraction(XRD) and atomic force microscope(AFM). The results show that Ga N film deposited with buffer layer is very important, and as-grown Ga N films is of high c-axis preferred orientation and highly crystallined with the buffer layer temperature deposited at 100 ℃, and the Ga N fims have the smooth surface.