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《China Powder Science and Technology》 2017-06
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Effect of low temperature buffer layer of GaN films deposited on diamond substrate

ZHANG Dong;ZHAO Yan;SONG Shiwei;LI Yucai;WANG Jian;BI Xiaoguo;New Energy Institute of Shenyang Institute of Engineering;  
Ga N films were deposited on freestanding diamond substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD) technique with various buffer layer deposition temperature. The effect of buffer layer deposition temperature on the quality of Ga N flim was studied using reflection high energy electron diffraction(RHEED), X-ray diffraction(XRD) and atomic force microscope(AFM). The results show that Ga N film deposited with buffer layer is very important, and as-grown Ga N films is of high c-axis preferred orientation and highly crystallined with the buffer layer temperature deposited at 100 ℃, and the Ga N fims have the smooth surface.
【Fund】: 国家自然科学基金项目 编号:51472047;; 辽宁省自然科学基金项目 编号:20170540664
【CateGory Index】: TN304.2
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