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《Opto-electronic Engineering》 2001-01
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The Stress Properties of Oxide Thin Films Prepared by Reactive Electron Beam Evaporation

XIONG Sheng ming 1, ZHANG Yun dong 1, TANG Jin fa 2 (1.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China;2.Department of Opto Electronics Information Engineering,Zhejiang University, Hangzhou 310027, China  
The stresses of oxide optical thin films prepared by reactive electron beam evaporation have been investigated in air. In order to find out the deposition technological parameters for reducing the stress of multi layer film structure, the stresses of the oxide films such as TiO 2, Ta 2O 5, SiO 2, Al 2O 3 and HfO 2 are tested. We discover that the stresses in some films are compressive stresses and the others are tension stresses. The experiments reveal that the heat treatment can effectively reduce the optical absorption and change the stress.
【CateGory Index】: TN204
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