Design of Silicon Based Germanium Metal-semiconductor-metal Photodetector with Asymmetric Area Electrodes
ZHANG Shiyu;HONG Xia;FANG Xu;YE Hui;Department of Optical Engineering, Zhejiang University;
We have proposed a design of silicon based germanium metal-semiconductor-metal(MSM) photodetectors with asymmetric area electrodes based upon its dark current suppression mechanism. The influence of electrode structure on the dark current are simulated using ATLAS software. And the dark current of the samples is reduced to μA scale in experiment. Effective dark current suppression and performance improvement in silicon based germanium MSM photodetectors are then demonstrated.