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Time Resolved Femtosecond Free Induction Decay in Semiconductor

Li Qing Luo Qi Qiu Zhiren Li Weiliang Yu Xiangyang Zhou jianying (State Key Laboratory of Ultrafast Laser Spectroscopy, Zhongshan University, Guangzhou 510275) (Received 7 September 1998; revised 16 November 1998)  
Coherent properties for excitons and for free carriers in intrinsic bulk GaAs are studied with femtosecond free induction decay (FID). The GaAs at 77 K is excited at its excitonic energy with dual fs pulses from a Ti∶Sapphire laser and the FID is recorded through photocurrent detection. The dephasing rates are determined by comparing the FID with theoretical results for density matrix in homogeneouse brodening two level system.
【Fund】: 国家自然科学基金;;国家教育部博士点基金;;广东省自然科学
【CateGory Index】: TN249
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