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《ACTA OPTICA SINICA》 1996-02
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Luminescence of Porous Silicon/Laser Dye Composite System

Ma Yurong Li Qingshan Li Peng Fang Rongchuan (Department of Physics, Structure Analysis Laboratory, University of Science and Technology of China, Hefei 230026)  
Porous silicon/laser dye composite was obtained by efficiently inserting laser dye into porous silicon. The composite shows luminescent property of both the porous silicon and the laser dye when inserting trace dye. Increasing the insert of dye molecules, luminescence of the composite increases, the rise time becomes faster, the pulse width of the luminescence narrows, and the composite shows mainly the luminescent property of laser dye. The luminescence peak position of the composite shifts clearly to the blue compared to that of the same dye in alcohol solution.
【Fund】: 国家自然科学基金
【CateGory Index】: TN244
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【Co-references】
Chinese Journal Full-text Database 10 Hits
1 LIU Guangchang CHEN Xin HUANG Liang (Jinan University,Guangzhou 510632,CHN);A new method for design of CCD driving circuit[J];SEMICONDUCTOR OPTOELECTRONICS;1997-04
2 Qin Guogang/Department of Physics, Peking University,Beijing 100871 Jia Yongqiang/Department of Physics, Peking University,Beijing 100871;A New Physical Model for Strong Visible Luminescence of Porous Si[J];Chinese Journal of Semiconductors;1993-10
3 Xie Xinyun,Liu Weili,Men Chuanling,Lin Qing,Shen Qinwo and Lin Chenglu(State Key Laboratory of Functional Material for Informatics,Shanghai Institute of Microsystem and Information Technology, The Chinese Academy of Sciences,Shanghai 200050,China);Fabrication of Silicon-on-Insulator Structure with Si_3N_4 as Buried Insulating Films by Epitaxial Layer Transfer[J];Chinese Journal of Semiconductors;2003-02
4 Xus Fangshi(National Laboratory for Superlattices Microstructures, Beijing 100083)(Nanjing Electronic Devices Institute, Nanjing 210016);A Novel Quantum Confined State and PL Spectrum in Porous Silicon[J];CHINESE JOURNAL OF SEMICONDUCTORS;1995-09
5 Xiong Zuhong, Liu Xiaobing 1, Liao Liangsheng, Yuan Shuai, He Jun, Zhou Xiang, Ciao Xianan, Ding Xunmin, Hou Xiaoyuan (Surface Physics Laboratory and Fudan T.D. Lee Laboratory, Fudan Universitry, Shanghai 200433) (1 Physics Department, Changsha Ele;Novel Simple and Effective Post Treatment Technique of Porous Silicon[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-06
6 ZHANG Zhan_jun 1,2 , WU Bin 1, LI Jing_jian 1, LIU Zhong_fan 1, CAI Sheng_min 1 (1.College of Chemistry and Molecular Engineering, Peking University, Beijing 100871; 2.Chemistry Department of Graduate School of Chinese Academic Sciences, Be;Further Evidence for Surface Properties of Porous Silicon Resulting in Electroluminescence[J];Electrochemistry;2002-01
7 Wang Rongqiu Li Jingjian Cai Shengmin* Liu Zhongfan(Center for Intelligent Materials Research, College of Chem. and Molecular Engineering,Peking Univ., Beijing 100871);The Time Dependent Red Shift Phenomenon of Visible Electroluminescence of Porous Silicon[J];ELECTROCHEMISTRY;1998-01
8 ZHOU Wei1, Yo shio Fukuda2, Kazuo Furuya2 (1. Institute of Nuclear Energy Technology Tsin ghua University, Beijing 100084, China; 2. National Research for Metals, Tsukuba, Ib araki 305-0003, Japan).;Study of porous silicon layer treated with wet etching techniques.[J];ELECTRONIC COMPONENTS $ MATERIALS;2000-05
9 Wanc Kai-yuan;Tang jie-ying(Dept,of Eyectronic Engineering,Southeaxt University);Efficient Luminescence o f Si substrate Material ──A Study on Photoluminescence of Porous Silicon[J];JOURNAL OF ELECTRON DEVICES;1994-03
10 ZHAO Xiao wei, ZHANG Ji ying, YANG Bao jun, Fan X W, YANG Yi, SHEN De zhen (Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, China);Effect of Substrate Temperature on the Epilayer Quality of ZnS Grown on the Si Substrate by LP-MOCVD[J];CHINESE JOURNAL OF LUMINESCENCE;2000-01
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