STUDIES ON PHOTOLUMINESCENCE OF HETEROEP IT AXIAL GaAs/ InP MATERIAL
Li Yudong, Wang Benzhong, Wang Rufeng, Liu Shiyong, Su ShichangDepartment of Electronics Science, Jilin University; National Integrated Optoelectronics Laboratory, Jilin University Region: Changchun, 130023
Photoluminsscence of GaAs/InP grown by MOCVD-LPE hybrid epitaxial growth technique has been first measured and analyzed. It has been showed that the luminescence intensity of GaAs grown by hybrid growth technique is much higher than that of GaAs grown by MOCVD one-step epitaxial growth. Several transition excitons of GaAs and InP have been identified at 16 K. A FWHM of 8, 4 meV of near-band-edge PL spectrum from a GaAs/InP sample has been observed, which exhibits its high quality.