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《Acta Photonica Sinica》 1993-02
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INVESTIGATION OF MOCVD GROWTH OF GaAs AND ALGaAs ON SI SUBSTRATE

Gao Hongkai, Gong Ping, Wang HaibinXi'an Institue of Optics and Precision Mechanics, Academia Sinica, 710068Zhu Zuoyun, Li YuejinXidian University, Xi'an 710071  
High guality epilayers of GaAs and AlGaAs on Si substrates were obtained in a self-made atmospheric pressure MOCVD system. After high temperature annealing of Si substrates, two-step growth method were used in growth of GaAs and AlGaAs epilayers, The epilayer of GaAs on Si were measured by x-ray double-crystal diffractometry. The half-width of the peak of the rocking curve of the GaAs epilayer was 200 arc sec. The half-width of the PL spectrum at 77K of GaAs and AlGaAs was 17meV and 24meV respectively.
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 He Xingren Chongqing Optoelectronics Research Institute;A Progress of Ⅲ-Ⅴ Compound Semiconductor Devices Grown Directly on Si Substrate[J];Semiconductor Optoelectronics;1989-02
【Co-citations】
Chinese Journal Full-text Database 1 Hits
1 Gao Hongkai;Zhao Xing;He Yimin;Yang Qing;Zhu Li'an(Xi'an Institute of Optics and Precision Mechanics,Academia Sinica 710068);INVESTIGATION OF MOCVD GROWTH OF GaAs ON Ge SUBSTRATE[J];ACTA PHOTONICA SINECA;1996-06
【Co-references】
Chinese Journal Full-text Database 1 Hits
1 WANG Zhaoping/National Laboratory for Semiconductor Superlattices and Related Microstructures and Institute of Semiconductors,Academia Sinica, Beijing 100083HAN Hexiang/National Laboratory for Semiconductor Superlattices and Related Microstructures and Institute of Semiconductors,Academia Sinica, Beijing 100083LI Guohua/National Laboratory for Semiconductor Superlattices and Related Microstructures and Institute of Semiconductors,Academia Sinica, Beijing 100083CHEN Zonggui/National Laboratory for Semiconductor Superlattices and Related Microstructures and Institute of Semiconductors,Academia Sinica, Beijing 100083ZHONG Zhantian/National Laboratory for Semiconductor Superlattices and Related Microstructures and Institute of Semiconductors,Academia Sinica, Beijing 100083;Longitudinal Optical Phonon Modes in GaAs/Al_xGa_(1-x)As Superlattices[J];Chinese Journal of Semiconductors;1990-01
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