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《Journal of Hebei University(Natural Science Edition)》 2008-01
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Progress of the Fabricated Methods and Luminescent Properties of Ge Nanostructures

ZHANG Lei,PENG Ying-cai,MA Lei,XU Zhuo,WANG Xia(College of Electronic and Informational Engineering,Hebei University,Baoding 071002,China)  
Recently,the study of the Si-based luminescent materials and devices has attracted much attention of semiconductor photoelectric technology.Except Si nanostructures,such as Si nanocrystals,Si quantum dots,Si/SiO2 superlattice,Ge nanostructures also exhibit efficient luminescence properties.In the paper,we mainly review the research progress of the fabricated mathods and their luminescent properties of various Ge nanostructures in recent years.
【CateGory Index】: O614
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