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The study of the Pb(Zr_(0.3),Ti_(0.7))O_3 ferroelectric thin films with the LaNiO_3 thin films as the bottom electrode

LI Yawei1, ZHANG Weifeng1, MENG Xiangjian2, SUN Jinglan2, WANG Gengshui2, CHU Junhao2(1. College Physics and Information Optoelectronics, Henan University, Henan Kaifeng 475001, China;2. National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083, China)  
LaNiO3 thin films were prepared on Si(100) substrates using sol-gel technique, and Pb(Zr0.3,Ti0.7)O3 thin films were prepared on LaNiO3/Si(100) substrates with the same method. The crystallinity, surface morphology and electric properties of the LaNiO3 and Pb(Zr0.3,Ti0.7)O3 thin films were studied.
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