Full-Text Search:
Home|About CNKI|User Service|中文
Add to Favorite Get Latest Update

Wellposedness of Quasineutral Drift Diffusion Model for Semiconductors

HAN Xiao-sen~1,ZHAO Cai-xia~2,GAO Yong~1,WANG Shu~1 (1.College of Mathematics and Information Science, Henan University, Henan Kaifeng 475001, China; 2.Henan Medicine School, Henan Kaifeng 475001, China)  
In this paper the local and global wellposedness of quasineutral drift diffudion model for semiconductor device is studied.Local and global existence and uniqueness of the classical solution of quasineutral drift diffusion model for semiconductors are proven by the regularization method and upper and lower solution techniques.Some stationary sigular solutions are also given.
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
©CNKI All Rights Reserved