Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Hefei University of Technology(Natural Science)》 2006-06
Add to Favorite Get Latest Update

Progress in studies on the optically active defect center in silica

XU Guang-qing, ZHENG Zhi-xiang, TANG Wen-ming, LIU Jun-wu, L Jun, WANG Jian-min (School of Material Science and Engineering, Hefei University of Technology, Hefei 230009, China)  
The recent progress in researches on the optical properties of silica widely used in optical communication, semiconductor photoelectron apparatus and lighting field is reviewed. The optically active defect centers of such types as E’, two kinds of oxygen-deficiency and some kinds of oxygen-richness in silica play an important role in optical communication fiber and UV absorption. The researches on some oxygen-deficient defects and the metal ions doped or implanted semiconductor nanoparticles with fine luminescence properties have made it possible for silica to be used in the lighting field. The negative ions modified anion coordination field may remarkably affect and improve the optical properties of the optically active defects in silica.
【CateGory Index】: TN304
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 10 Hits
1 Liu Shixiang, Liu Yuzhen, Wu Yong 1, Shi Wanquan, Chen Zhijian, Han Yiqin, Liu Jinlong, Zhang Tonghe 2, Yao Decheng(The Graduate School, University of Science and Technology of China at Beijing, Beijing 100039) (1 Capital Normal University, Beijing;Three PL Peaks of Si~+ Implanted SiO_2 Film and Influence of RTA[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-03
2 Lin Jun; Yao Guangqing; Duan Jiaqi; Qin Guogang( Department Of Physics , Peking University, Beijing 100871 )( Department of Chemistry, Peking University, Beijing 100871 );Ultraviolet Light Emission from Porous Silicon with Its Peak Wavelength Around 370 nm[J];CHINESE JOURNAL OF SEMICONDUCTORS;1995-12
3 Xia Jianbai (National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083);Silicon Luminescence Research[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-05
4 Lin Feng, Sheng Chi, Gong Dawei, Liu Xiaohan(State Key Laboratory of Surface Physics,Fudan University, Shanghai 200433);Growth of Si/SiO 2 Superlattices in MBE System and Its Luminescence[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-08
5 Wang Qiming(Institute of Semiconductors, The Chinese Academy of Sciences, National Key Laboratories on Integrated Optoelectronics,Beijing 100083);Semiconductor Optoelectronics in the Field of Information High Technology[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-10
6 Gao Dequan (Foshan Sun Packaging Co.,Ltd. Postcode);The Present Status of Foreign High Vacuum Web Coating Machines[J];PACKAGING ENGINEERING;1997-Z1
7 HAN Erli,CHEN Qiang,GE Yuanjing,ZHANG Guangqiu (Beijing Institute of Graphic Communication,Beijing 102600,China);Development and production methods of SiOx film as barrier packaging material[J];Packaging Engineering;2005-06
8 Li Hongjian~1 Peng Jingcui~1 Qu Shu~1 Xu Xuemei~(1,2) Huang Shengxiang~1 Xia Hui~1(1 The Institute of Electronic Materials,Hunan University,Changsha 410082;2 Dept.of Materials Science,Central South University,Changsha 410083);Characteristics and Mechanism of Luminescence from Silicon Based Materials[J];Materials Review;2001-09
9 YUAN Zhizhong YANG Deren (State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027);Research and Application of Luminescence from Defects in Silicon[J];Materials Review;2005-01
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved