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《Nuclear Fusion and Plasma Physics》 2009-01
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Study on high growth-rate deposition of nanocrystalline silicon thin film with VHF-PECVD

ZHUANG Juan,WANG De-zhen,GAO Xin-xin,WANG Yan-hui(State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024)  
Using the self-consistent one dimensional fluid model,equations of particle-balance,momentum,charged particle flux and current continuum have been established to study the behavior of chief particles in low-pressure very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).The influence of VHF(very high frequency) has been analyzed and the profiles of SiH3- negative,electrons,SiH3+ positive density have been obtained.The simulation results show that the density of SiH3- negative changes with frequency and consequently the frequency controls the particle nucleation and growth;meanwhile,the densities of electron,SiH3+ positive and the electric field intensity also vary with frequency,so that the chemical reaction and the nanoparticle deposition are accelerated.
【Fund】: 国家自然科学基金资助项目(10775026)
【CateGory Index】: TB383.1
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【Citations】
Chinese Journal Full-text Database 2 Hits
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【Co-citations】
Chinese Journal Full-text Database 7 Hits
1 He Yuliang 1,2 Xi Zhonghe 3 Yu Mingbin 4, 1 Lee Yuexia 2 Peng Yincai 5,1 Liu Ming 1 1. The Materials Physics and Chemistry Research Center, BUAA, Beijing 100083 2. The National Lab. of Superlattices and Microstructure, T;The transport and quantum dots characters of hydrogenated nano crystalline silicon diode[J];;1998-01
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