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《Journal of Hunan University(Natural Sciences)》 1979-04
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The Amorphous Semiconductor Silicon p-n Junction

Yan Yifan  
Early in 1976, W.E.Spear.et al prepared an all-amorphous silicon (a—si) p-n junction. In this article the writer attempts establish a corresponding static theory of the a—si p—n junction.On condition that the analytic form of the distribution function of gap states density is still unknbwn, applying the integral mean-value theorem and properly supposing the characteristic of the energy band of the p—n junction, an equation is finally deduced as expected. It shows that in light doping the expsession about electrostatic potential of a—si p—n junction, mathematically, is the same as its counterpart in c—si for abrupt junction except for one factor.
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